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Schnauber, Peter,Schall, Johannes,Bounouar, Samir,Hö,hne, Theresa,Park, Suk-In,Ryu, Geun-Hwan,Heindel, Tobias,Burger, Sven,Song, Jin-Dong,Rodt, Sven,Reitzenstein, Stephan American Chemical Society 2018 NANO LETTERS Vol.18 No.4
<P>The development of multinode quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates, and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of preselected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with <I>g</I><SUP>(2)</SUP>(0) = 0.13 ± 0.02. Due to its high patterning resolution as well as spectral and spatial control, in situ electron beam lithography allows for integration of preselected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way toward multinode, fully integrated quantum photonic chips.</P> [FIG OMISSION]</BR>
하승규,송진동,김수연,Samir Bounouar,Le Si Dang,김종수 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.51
Low-density (∼3.5 × 10^9 cm^(−2)) GaAs quantum dots intended for single photon source application were grown between Al^(0.3)Ga^(0.7)As barriers by using droplet epitaxy. This material system has an emitting wavelength compatible with cost-effective Si-based detectors. Excitation-power-dependent and time-resolved micro-photoluminescence measurements were performed at low temperature (7 K) to characterize the optical properties of the excitonic states, which are attributed to good quantum confinement in the GaAs quantum dots.