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RISS 인기검색어
- 검색키워드
- 저자 : Adelmann, Christoph (검색결과 2 건)
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GaN Quantum Dots: Physics and Applications
Le si Dang,B. Daudin,C. Adelmann,E. Martinez,E. Monroy,G. Fishman,H. Mariette,J. Simon,J. L. Rouviere,N. Pelekanos,조용훈 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
Recent works by our group on hexagonal and cubic GaN/AlN quantum dots grown by molecular beam epitaxy are reviewed. It is shown that the growth of GaN on AlN can occur either in a layer-by-layer mode to form quantum wells or in the Stranski-Krastanow mode to form self-assembled quantum dots. High resolution transmission electron microscopy reveals that quantum dots are truncated pyramids (typically 3 nm high and 15 nm wide), nucleating on top of a wetting layer. The existence of internal electric fields of 7 MV/cm in hexagonal quantum dots is evidenced by observations of various physical effects related to the quantum confined Stark effect, {\it e.g.} energy redshift of the interband transition, decrease of its oscillator strength, or enhancement of the exciton interaction with LO phonons. Prospects for UV and near-IR applications, using interband and intersubband transitions of GaN/AlN quantum dots, respectively, will be discussed also in this presentation.
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Han, Jeong Hwan,Nyns, Laura,Delabie, Annelies,Franquet, Alexis,Van Elshocht, Sven,Adelmann, Christoph American Chemical Society 2014 Chemistry of materials Vol.26 No.3
<P>The reaction chemistry during the atomic layer deposition (ALD) of Sc<SUB>2</SUB>O<SUB>3</SUB> and Gd<SUB>2</SUB>O<SUB>3</SUB> from Sc(MeCp)<SUB>3</SUB>, Gd(<SUP>i</SUP>PrCp)<SUB>3</SUB>, and H<SUB>2</SUB>O was investigated by <I>in situ</I> time-resolved quadrupole mass spectrometry. Despite the similarity of the ligands of the Sc and Gd precursors, the growth characteristics and ligand dissociation patterns of the Sc<SUB>2</SUB>O<SUB>3</SUB> and Gd<SUB>2</SUB>O<SUB>3</SUB> ALD processes showed considerably different behavior. For both processes, the precursors reacted with the hydroxylated surface by proton transfer and release of the protonated ligand. The remaining ligands were then removed by hydrolysis during the H<SUB>2</SUB>O pulse. However, for the Sc(MeCp)<SUB>3</SUB>/H<SUB>2</SUB>O process, ∼56% of MeCpH was released during the Sc(MeCp)<SUB>3</SUB> exposure, whereas in the case of the Gd(<SUP>i</SUP>PrCp)<SUB>3</SUB>/H<SUB>2</SUB>O process, as much as 90% of <SUP>i</SUP>PrCpH was released during the Gd(<SUP>i</SUP>PrCp)<SUB>3</SUB> pulse. The observation that almost all <SUP>i</SUP>PrCp ligands were removed during the initial Gd(<SUP>i</SUP>PrCp)<SUB>3</SUB> absorption step can be ascribed to CVD-like reactions between the Gd(<SUP>i</SUP>PrCp)<SUB>3</SUB> precursor and excess hydroxide or physisorbed H<SUB>2</SUB>O on the hygroscopic Gd<SUB>2</SUB>O<SUB>3</SUB> surface. The influence of the growth temperature on the ligand exchange behavior and the resulting film properties (thickness uniformity, impurity concentration) was studied in the temperature range between 200 and 350 °C. In addition, the transient growth behavior of Gd<SUB>2</SUB>O<SUB>3</SUB> on Sc<SUB>2</SUB>O<SUB>3</SUB> and vice versa was studied, indicating that the hygroscopic nature of Gd<SUB>2</SUB>O<SUB>3</SUB> also strongly influences the deposition of Gd<SUB><I>x</I></SUB>Sc<SUB>1–<I>x</I></SUB>O<SUB>3</SUB> ternary oxides.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/cmatex/2014/cmatex.2014.26.issue-3/cm403390j/production/images/medium/cm-2013-03390j_0009.gif'></P>
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