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- 저자 : Delabie, Annelies (검색결과 2 건)
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Han, Jeong Hwan,Nyns, Laura,Delabie, Annelies,Franquet, Alexis,Van Elshocht, Sven,Adelmann, Christoph American Chemical Society 2014 Chemistry of materials Vol.26 No.3
<P>The reaction chemistry during the atomic layer deposition (ALD) of Sc<SUB>2</SUB>O<SUB>3</SUB> and Gd<SUB>2</SUB>O<SUB>3</SUB> from Sc(MeCp)<SUB>3</SUB>, Gd(<SUP>i</SUP>PrCp)<SUB>3</SUB>, and H<SUB>2</SUB>O was investigated by <I>in situ</I> time-resolved quadrupole mass spectrometry. Despite the similarity of the ligands of the Sc and Gd precursors, the growth characteristics and ligand dissociation patterns of the Sc<SUB>2</SUB>O<SUB>3</SUB> and Gd<SUB>2</SUB>O<SUB>3</SUB> ALD processes showed considerably different behavior. For both processes, the precursors reacted with the hydroxylated surface by proton transfer and release of the protonated ligand. The remaining ligands were then removed by hydrolysis during the H<SUB>2</SUB>O pulse. However, for the Sc(MeCp)<SUB>3</SUB>/H<SUB>2</SUB>O process, ∼56% of MeCpH was released during the Sc(MeCp)<SUB>3</SUB> exposure, whereas in the case of the Gd(<SUP>i</SUP>PrCp)<SUB>3</SUB>/H<SUB>2</SUB>O process, as much as 90% of <SUP>i</SUP>PrCpH was released during the Gd(<SUP>i</SUP>PrCp)<SUB>3</SUB> pulse. The observation that almost all <SUP>i</SUP>PrCp ligands were removed during the initial Gd(<SUP>i</SUP>PrCp)<SUB>3</SUB> absorption step can be ascribed to CVD-like reactions between the Gd(<SUP>i</SUP>PrCp)<SUB>3</SUB> precursor and excess hydroxide or physisorbed H<SUB>2</SUB>O on the hygroscopic Gd<SUB>2</SUB>O<SUB>3</SUB> surface. The influence of the growth temperature on the ligand exchange behavior and the resulting film properties (thickness uniformity, impurity concentration) was studied in the temperature range between 200 and 350 °C. In addition, the transient growth behavior of Gd<SUB>2</SUB>O<SUB>3</SUB> on Sc<SUB>2</SUB>O<SUB>3</SUB> and vice versa was studied, indicating that the hygroscopic nature of Gd<SUB>2</SUB>O<SUB>3</SUB> also strongly influences the deposition of Gd<SUB><I>x</I></SUB>Sc<SUB>1–<I>x</I></SUB>O<SUB>3</SUB> ternary oxides.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/cmatex/2014/cmatex.2014.26.issue-3/cm403390j/production/images/medium/cm-2013-03390j_0009.gif'></P>
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Cho, Moonju,Degraeve, Robin,Pourtois, Geoffrey,Delabie, Annelies,Ragnarsson, Lars-ke,Kauerauf, Thomas,Groeseneken, Guido,De Gendt, Stefan,Heyns, Marc,Hwang, Cheol Seong IEEE 2007 IEEE transactions on electron devices Vol.54 No.4
<P>Atomic layer deposition (ALD) with HfCl<SUB>4</SUB> as a precursor is widely used for HfO<SUB>2</SUB> fabrication. Due to the nature of the precursor under study, i.e., HfCl<SUB>4</SUB> and H<SUB>2</SUB>O, the presence of chlorine residues in the film due to insufficient hydrolysis is eminent. Obviously, the chlorine residue in the HfO<SUB>2</SUB> film is suspected to affect the quality of the HfO<SUB>2</SUB> film. In this paper, The authors reduced the concentration of chlorine residues by increasing the H<SUB>2</SUB>O oxidant pulse time in between the deposition cycles from 0.3 to 10 and 90 s. Time-of-flight secondary ion mass spectrometry analysis shows that this decreases the chlorine concentration in the HfO<SUB>2</SUB> film by more than one order of magnitude. However, time-dependent dielectric breakdown analysis shows that the lifetime remains quasi unaffected (within identical error bars) for the different injection cycles. Charge pumping analysis was done by varying both pulse frequency and amplitude to investigate the creation of defects, but negligible differences were observed. Therefore, the presence of chlorine residues has no significant impact on the trap generation and reliability of ALD HfO<SUB>2</SUB> layers, and this result corresponded with the mobility result. The experimental picture is confirmed with first-principle calculations that show that the presence of chlorine residues does not induce defect levels in the bandgap of HfO<SUB>2</SUB></P>
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