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- 저자 : A. K. Barua (검색결과 2 건)
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Effect of the oxidation process on the luminescence of HF-treated porous silicon
S.N.Sharma,R.Banerjee,A.K.Barua 한국물리학회 2003 Current Applied Physics Vol.3 No.2, 3
Porous silicon (PS) films were prepared by lateral anodization of crystalline silicon in HF based solutions at dierent currentdensities. The oxidation mechanism of the HF-treated PS films has been monitored by means of photoluminescence (PL) and. 10 s resulted in the increment ofpolysilane/hydride species on the surface of PS rather than any change in the dimensions of the silicon-crystallites. It has been foundthat HF-treated PS surfaces are relatively stable against oxidation as compared to untreated PS films. Upon oxidation of the HF-treated PS films, the PL intensity initially increases as a result of reduction in crystallite size to exhibit quantum size eects and thendecreases owing to loss of luminescing structures due to over-oxidation of the Si-columns. We infer that the surface passivationemission mechanisms are responsible to explain the luminescence properties of PS.. 2002 Elsevier Science B.V. All rights reserved.
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M. Srinivasan,P. Karuppasamy,P. Ramasamy,A. K. Barua 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.4
Numerical modelling has emerged as a powerful tool for the development andoptimization of directional solidification process for mass production of multicrystallinesilicon. A transient global heat transfer model is performed to investigate theeffect of bottom grooved furnace upon the directional solidification (DS) process ofmulti-crystalline silicon (mc-Si). The temperature distribution, von Mises stress,residual stress and dislocation density rate in multi-crystalline silicon ingots grown bymodified directional solidification method have been investigated for five growth stagesusing finite volume method at the critical Prandtl number, Pr = 0.01. This paperdiscusses bottom groove furnace instead of seed crystal DS method. It achieves anadvanced understanding of the thermal and mechanical behaviour in grown multicrystallineingot by bottom grooved directional solidification method. The von Misesstress and dislocation density were reduced while using the bottom grooved furnace. This work was carried out in the different grooves of radius 30 mm, 60 mm and 90 mmof the heat exchanger block of the DS furnace. In this paper, the results are presented for60 mm radius groove only because it has got better results compared to the othergrooves. Also, the computational results of bottom grooved DS method show betterperformance compared the conventional DS method for stress and dislocation densityin grown ingot.
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