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Hot-Walled PLD법을 이용한 은도핑된 나노선의 특성분석
김경원(Kyoungwon Kim),박동훈(Dong-Hoon Park),플락(Pulak Chandra Debnath),김상식(Sangsig Kim),이상렬(Sang Yeol Lee) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.11
1, 3 and 5 weight % Ag doped zinc oxide (ZnO) nanowires (NWs) were grown on the (0001) plane of sapphire substrate by hot-wall pulsed laser deposition (HW-PLD) with Au catalyst at 800℃. The process condition for the doped ZnO NW formation is optimized by adjusting the kinetic energy and the flux of the laser ablated particles by hot-wall control. Variation of structural and optical properties of various NWs are investigated depending on the growth kinetics by changing target to substrate distance scanning electron microscopy (SEM), transmittance electron microscopy (TEM) and photoluminescence (PL). PL spectra of the multiple doped NWs measured at different temperatures ranging from 13 to 300 K were studied experimentally and theoretically in order to investigate the p-type behavior indicated by the acceptor-bound excitons.