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다이아몬드상 탄소 박막이 코팅된 실리콘 전계 방출 소자의 특성
최만섭,김진호,김용상 명지대학교 대학원 1997 대학원논문집 Vol.1 No.-
We have fabricated the field emitter arrays (FEAs) coated with diamond-like carbon (DLC) films. The turn-on field of DLC-coated FEAs was rapidly decreased and the emission current was remarkably increased compared with the non-coated silicon FEAs. In the nitrogen doped FEAs, the turn-on field decreased and the emission current increased with nitrogen doping concentration. From the Fowler-Nordheim plot, the work functions of the DLC-coated FEAs are much lower than those of the non-coated silicon FEAs. As nitrogen doping concentrations are increased, the work function of FEAs is decreased and the field emission properties are improved in nitrogen doped DLC-coated FEAs. This phenomenon is due to the fact that the Fermi energy level moves to the conduction band by increasing nitrogen doping concentration.
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경사식각을 이용하여 제작된 LDD구조의 다결정 실리콘 박막 트랜지스터의 시뮬레이션을 통한 특성 분석
黃聖洙,金東鎭,崔萬燮,金容商 明知大學校 産業技術硏究所 1997 産業技術硏究所論文集 Vol.16 No.-
We have proposed a new structure of polysilicon thin film transistor(poly-Si TFT) which was fabricated by employing taper etching. The new structured poly-Si TFT has gradually doped LDD region. The source/ drain region and LDD region was implanted simultaneously through the taper type oxide films. The taper type oxide film was fabricated by using the different etching ratio between oxide film deposited by APCVD (Atmospheric Pressure Chemical Vapor Deposition) and nitride film depostited by PECVD (Plasma Enhanced Chemical Vapor Deposition). The merits of this structured poly-Si TFT are the reduction of the fabrication process steps and the decrease of leakage current by the reduced lateral electric field near the drain region. With this structured poly-Si TFT's, we can be expected to lower the cost and improve the device performance.
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