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H. S. Kim(김혜수),S. Y. Ji(지석영),C. R. Yu(유채린),J. Y. Jung(정주연) Korean Society for Precision Engineering 2021 한국정밀공학회 학술발표대회 논문집 Vol.2021 No.11월
The infrared focal plane array (IRFPA) detection type imaging system has excellent thermal resolution and has a very good optical resolution as the number of pixels reaches a maximum of tens of thousands. However, since the IRFPA detection type imaging system is a thermal type that operates at room temperature, the basic thermal noise is high and the signal-to-noise (S/N) ratio is lower than that of the quantum type operating at extremely low temperature. To compensate for this, some of research has been done on the IRFPA polarimetric imaging system for high resolution. However, conventional fabrication methods such as photolithography and nano imprint lithography, are complex, time-consuming and expensive. In this paper, we propose a simple method for fabricating superpixel patterns applied to the mid-infrared region IRFPA polarimetric imaging system through the nanotransfer printing process using polyvinyl alcohol as an adhesive layer. This improves the sensitivity of the thermal type infrared sensor operating at room temperature, so that it has almost the same performance as the quantum type infrared sensor at a lower cost.
한석영(S.Y.Han),배현우(H.W.Bai) 한국자동차공학회 1998 한국자동차공학회 춘 추계 학술대회 논문집 Vol.1998 No.11_2
The purpose of this study was to develop a new element removal method for ESO (Evolutionary Structural Optimization) which is one of topology optimization methods. In case of ESO the element removal ratio was fixed throughout topology optimization by 1 or 2%. As a result it has no flexibility for various types of structures and thus the rate of convergence might not be efficient. Also the results of topology optimization were obtained differently due to the element removal ratio. In this paper, a new element removal method was developed by adding and removing elements bi-directionally. Then it was applied to a short cantilever, a bracket and a vertical cantilever with overall stiffness constraints. From the results, it was verified that the rate of convergence was very improved and the optimal designed structures was obtained very similar to the results of ESO with the fixed element removal ratio of \%.<br/>
Recrystallization of Amorphous Silicon Using Complex Laser System
S. Y. Ji(지석영),W. S. Chang(장원석) Korean Society for Precision Engineering 2021 한국정밀공학회 학술발표대회 논문집 Vol.2021 No.11월
We fabricate a complex laser system for recrystallization of amorphous silicon. In previous studies, many lasers such as UV laser, CW laser, and femtosecond laser have been used for recrystallization of amorphous silicon. However, each laser has its own advantages and disadvantages in the silicon recrystallization process. We implemented a system that efficiently recrystallize polycrystal silicon by utilizing the advantages of 532 continuous lasers and 515 nm femtosecond laser, respectively. The femtosecond laser raises the temperature up to the melting point of amorphous silicon without thermal damage to surrounding devices or substrate. And the CW laser serves to prevent a sudden drop in the temperature raised to the melting point by the femtosecond laser. Using this complex laser system, high-efficiency polycrystal silicon can be fabricated on a flexible substrate without thermal damage. We expect that the proposed approach can be a key technology for implementing user-designed wearable sensors and devices.