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A Study on the Manufacturing Processes of a Pressure Sensor with Temperature Compensation
이서준(Seo Jun Lee),이종항(Jong Hang Lee) Korean Society for Precision Engineering 2017 한국정밀공학회지 Vol.34 No.10
Pressure sensors are widely used in industries, including cars and coolers. Highly accurate pressure sensors are capable of corresponding to changes in the surrounding temperature. Additionally, the manufacturing process of pressure sensors greatly impacts the cost and degree of precision. This study undertook to examine the manufacturing process of pressure sensors, especially those using ceramic diaphragm. Ruthenium oxide (RuO2) was used instead of strain gauge for piezoresistance. TC thermistor (temperature coefficient) resistance compensated for changes in outdoor air temperature. Furthermore, thick-film resistors were precisely adjusted with laser trimming technology. These processes resulted in the production of a high accuracy diaphragm pressure sensor having an ability to correspond to changes in outdoor temperatures.
AlGaN Barrier 및 GaN Buffer 두께 변화에 따른 AlGaN/GaN HEMT 소자의 트랜스컨덕턴스 및 항복전압 동작 특성 향상에 관한 시뮬레이션 연구
김지훈(Ji-Hun Kim),이서준(Seo-Jun Lee),김도형(Dohyung Kim),최준혁(Jun-Hyeok Choi),김경용(Kyeong-Yong Kim),김현석(Hyun-Seok Kim) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.6
In this study, we investigated the DC characteristics of AlGaN/GaN high-electron-mobility transistor (HEMT) by modulating the thicknesses of AlGaN barrier and GaN buffer. As the AlGaN barrier thickness was decreased, transconductance (gm) was increased due to the drop of distance between gate and channel. In addition, increase of GaN buffer thickness resulted in improvement of breakdown voltage owing to the reduction of substrate leakage current. Consequently, simulation results will help to design AlGaN/GaN HEMTs that show higher gm and breakdown characteristics.