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Inductively-Coupled BCl3/O2 Plasma Etching of Germanium
김택성,양하용,길연호,최상식,정태수,강석일,심규환 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.5
We have investigated the etch rates and the surface morphologies of Ge samples as a functions of the oxygen concentration in the BCl3/O2 gas mixture, the inductively coupled plasma (ICP) power, and working pressure. The etch rate of Ge was found to have a peak etch rate at ∼15 % O2. The etch rate of Ge decreases from 3700 to 1050 °A/min as the O2 concentration increases from 15 to 40 %. The etch rate of Ge increases as the ICP power increases, whereas the etching rate of Ge decreases as the working pressure increases. The Ge surface has a very rough surface morphology, which is due to the self-masking effect by the deposition of chlorine and oxygen-related materials in the form of micro particles. The etched surface has a very smooth appearance at a 400-W ICP power, a 200-W bias power, and a 10-mTorr working pressure. The compositions of the reaction layers on Germanium due to BCl3/O2 plasmas were obtained by using X-ray photoelectron spectroscopy (XPS). Chlorine and oxygen were detected on the surfaces of the etched Ge samples, and an analysis of the reactive layer showed the presence of Ge-Cl and Ge-O bonds.
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Comparison of Germanium and Silicon Dry Etching by Using Inductively Coupled BCl3 Plasma
김택성,양하용,최상식,정태수,강석일,심규환 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.1
We have investigated the etch rates and the angle subtended for Ge and Si as a function of the BCl3 flow rate, the inductively coupled plasma (ICP) power, and the work pressure. The Ge etch rate is always greater than the Si etch rate, and the maxima of the Ge and Si etch rates are observed to be functions of the BCl3 flow rate. The peak etch rate is at 40 sccm BCl3 flow rate. The etch rate of Ge decreases from 2370 to 1780 °A/min as the BCl3 flow rate increases from 40 to 80 sccm. Also, the etch rate of Si decreases from 640 to 460 °A/min as the BCl3 flow rate increases from 20 to 80 sccm. The largest Ge/Si etch rate ratio is obtained for BCl3 flow rate of 60 sccm. The etch rate of Ge decreases from 2835 to 2094 °A/min as the ICP power increases from 200 to 500 W whereas the etching rate of Ge increases from 2370 to 2900 °A/min as the work pressure increases from 10to 50 mTorr. As the BCl3 flow, ICP power, and work pressure, increase the angle subtended also increases. Optical emission spectroscopy (OES) has been used to examine the gas phase species in the plasma, and emission from excited atomic B and Cl has been identified. The composition of the reaction layer on germanium due to the BCl3 plasmas has been obtained by using X-ray photoelectron spectroscopy (XPS). The reaction layer on germanium due to inductively coupled BCl3 plasma etching is found to be typically a very thin layer of the Ge-Cl and Ge-O.
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Characterization of Germanium Dry Etching Using Inductively Coupled BCl3 Plasma
김택성,양하용,최상식,정태수,강석일,심규환 대한금속·재료학회 2009 ELECTRONIC MATERIALS LETTERS Vol.5 No.1
This study investigates the etch rates and the etched surface for Ge as a function of variations in the BCl3 flow rate, inductively coupled plasma (ICP) power and work pressure. It was found that the peak etch rate is at 40 sccm of a BCl3 flow rate. The etch rate of Ge decreases from 2370 to 1780 Å/min as the BCl3 flow rate increases from 40 to 80 sccm. The etch rate of Ge decreases from 2835 to 2094 Å/min as ICP power increases from 200 to 500 W, whereas the etching rate of Ge increases from 2370 to 2900 Å/min as work pressure increases from 10 to 50 mTorr. The etched surface has a very smooth surface appearance at parameters of a BCl3 flow rate of 40 sccm, 400 W of ICP power, and 10 of mTorr work pressure.
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Nanoscale Dry Etching of Germanium by Using Inductively Coupled CF4 Plasma
Kyu-Hwan Shim,양하용,길연호,Hyeon Deok Yang,Jong-Han Yang,Woong-Ki Hong,Sukill Kang,Tae Soo Jeong,김택성 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.4
The nanoscale dry etching of germanium was investigated by using inductively coupled CF4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was ~200 mC/cm2. When ICP Power was 200W, CF4 gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as ~1.5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.
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