http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
백영준 한국지식재산학회 2007 産業財産權 Vol.- No.23
In the 21st century, the so called digital revolution era, the competitive power of companies and nations depend on how well they have developed and used advanced scientific technology. Consequently, in recent years many countries in the world are trying hard to acquire the newest high technology beforehand and protect their advanced scientific technology from leaking to other countries. Adapting to such change, our nation has continuously developed the Trade Secret Protection System to effectively cope with the new international competition environment which resulted from the ending of cold war and to be prepared for free competition market influenced by WTO. However, despite our country's effort, when the law is put in to effect, it becomes difficult to achieve the goal of the system which focuses on preventing any infringement of trade secrets. For example, if someone attempted but failed to steal trade secrets, it is very difficult to find evidence of the attempted crime. Also, even after the secrets have been drained out, the protection system would be of no use as the secrets would be no longer secrets. In the case of punishing those who've been confirmed to attempt the crime, it is likely that they will be given a lighter punishment than that for theft. Thus, substantially the system doesn't work for the beholders of the trade secrets but works against them. Therefore, it is most urgent to amend Unfair Competition Prevention & Trade Secret Protection Act and related laws that actually reflect the current state. In addition, companies should not forbid their employees from transferring to another company, prohibit them of competitive transaction, or force them to make a secret oath. Rather, if the company considers the damage from having their trade secret leak to be so fatal, they can grant their employees with duties to keep trade secrets through an official contract. By signing the official contract, the employees will be obliged to keep the company's trade secrets, and be compensated for doing so. Currently, our nation faces a challenge of obtaining advanced technologies from forefront nations and preventing underdeveloped countries or rival countries from stealing our technologies. Only the companies and countries that survive in this intense competition will be able to move forward to a promising future. Therefore, we should concentrate on gathering the utmost support and wisdom to develope and protect our advanced technologies with a positive attitude, and this will only be possible when our nation, companies, and the people cooperate devotedly as one.
日本의 영업비밀보호 강화에 따른 韓 · 日간 기술경쟁 변화와 영향
백영준,조용순 한국지식재산학회 2014 産業財産權 Vol.- No.44
On April 2014, Japan released a “Trade Secret Task Force Report”. Regarding this, Japan Patent Attorneys Association had various opinion. In addition, the contents of this report was reflected in the Intellectual Property Strategic Program 2014 and the 2014 revision of Japan Revitalization Strategy. It contains national strategies for the prevention of technology leakage and the protection of trade secret; for civil-national organization partnership; and for business correspondence etc. In Korea, the proprietary plan of national intellectual property 2014 has taken measures to protect trade secrets and to prevent technology leakage. Japan concerns japanese technicians’outflow, and at the same time Japan also has tried to technology outflow throughout M&A. However, what matters is Korea still needs Japanese technology. In Korea, we need to take a complementary 「win-win strategy」. For example, with having innovative ideas, we could deploy global business with Japanese companies which has cutting-edge technology. Additionally, in Korea, there are enormous laws for the prevention of technology leakage and the protection of trade secret. Therefore, the role of the control tower which coordinates policies for the trade secret protection and revised related laws has to be strengthen.
Si 기판의 소성변형 효과 보정에 의해 개선된 곡률측정법을 이용한 CVD 다이아몬드 박막의 잔류응력 평가
백영준,권동일,정증현,김용협 대한금속재료학회(대한금속학회) 2000 대한금속·재료학회지 Vol.38 No.12
Residual stresses present in diamond films produced by the CVD process often cause cracking and bowing of films, and then degrade product quality. To discuss the causes of bowing and cracking, the measurement and mechanical analyses of residual stresses are very important in diamond film research. Of the residual stresses, the intrinsic stress is one of the most important research topics because its effect on bowing of a free standing diamond film is strong even for its small magnitude. Quantification of the intrinsic stress is limited because high-temperature plastic deformation of Si substrate enlarges the substrate bending. In this study, an analytical model is proposed to obtain the initial intrinsic stress without contribution of the plastic deformation of the substrate. This new model in which the plastic deformation of Si is considered was developed using elastoplastic beam theory and diamond etching technology. In the model, the plastic deformation of Si is given by plastic curvature of substrate measured after removing the diamond film. The experiment is performed on diamond films deposited by microwave plasma assisted CVD. The results show that the overestimated intrinsic stress can be compensated successfully through the new model, which is consistent with that by Raman spectroscopy. The effects of film thickness and deposition temperature on residual stress is discussed in terms of microstructural change of diamond film.
Si 기판과 일정방향관계를 갖는 근사단결정 다이아몬드 박막 합성
백영준,은광용 한국세라믹학회 1994 한국세라믹학회지 Vol.31 No.4
The growth condition of highly oriented textured diamond film on a (100) Si substrate was investigated as a function of texture orientation. The growth process consisted of biased enhanced nucleation (BEN) and texture growth. The substrate was under the plasma of 6% CH4-94% H2 with negative bias of 200V during the BEN which grounded during the texture growth. The texture orintation changed from <100> to <110> by increasing substrate temperature. The nearly perfect match between textured diamond grains and the Si substrate could be obtained under the condition of <100> texture. The degree of tilt mismatch increased with the increase of deviation of texture orientation from <100>. The degree of twist mismatch appeared to increase abruptly beyond the critical deviation of texture orientation from <100> because the nuclei having the same orientation as the substrate were no more preferred grains for texture formation.