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고주파 마그네트론 스퍼터링 방법을 사용하여 Al 기판위에 증착된 PTFE 박막의 초-발수에 관한 특성 연구
배강,김화민,Bae, Kang,Kim, Hwa-Min 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.1
Super-hydrophobic properties have been achieved on the rf-sputtered polytetrafluoroethylene(PTFE) films deposited on etched aluminum surfaces. The microstructural evolution created after etching has been investigated by FESEM. The water contact angle over $160^{\circ}$ can be achieved on the rf-sputtered ultra-tihn PTFE film less than 10 nm coated on aluminum surface etched with 7 wt.%, 12.5 wt.%, and 15 wt.% HCl concentration for 12 min. XPS analysis have revealed the presence of a large quantity of $-CF_3$ and $-CF_2$ groups in the rf-sputtered PTFE films that effectively can reduce the surface energy of etched aluminum. The presence of patterned morphology along with the low surface energy at the rf-sputtered PTFE coating makes the aluminum surface with high super-hydrophobic property.
마이크로파 수열법에 의한 PbTiO$_3$ PMN 세라믹분말의 합성
배강,Bai, Kang 한국세라믹학회 1998 한국세라믹학회지 Vol.35 No.5
Lead titanate(PT) and lead magnesium niobate(PMN) ceramic powders were prepared by microwave hy-drothermal method using teflon bomb. Raw materials were Pb(NO3)2 and TiO2 for lead titanate and Pb(NO3)2 Nb2O5 and Mg(NO)3.6H2O for PMN with NaOH as mineralizer in both cases. in lead titanate synthsis rate of microwave hydrothermal method was faster three times than one f conventional hydrothermal methods In lead magnesium niobate synthsis the mixture of perovskite and pyrochlore phases was obtained by single step technique and the PMN was not obtained by double step technique due to low temperature limitation of teflon bomb.
BaTiO$_3$ 후막의 마이크로파 소성 및 전기적 특성
배강,김호기,Bai, Kang,Kim, Ho-Gi 한국세라믹학회 1998 한국세라믹학회지 Vol.35 No.11
To check the possibility for microwave sintering of MLCC(multi layer ceramic capacitor) the tape cast-ed BaTiO3 thick films in zirconia insulation box were sintered by the domestic microwave oven. Microwave sintered samples had higher density lower porosity than coventionally sintered ones. but they didn't show Z5U electrical properties due to short sintering time about 15 minutes.
BaTiO$_3$ 세라믹의 마이크로파 소성 및 전기적 특성
배강,김호기,Bai, Kang,Kim, Ho-Gi 한국세라믹학회 1998 한국세라믹학회지 Vol.35 No.11
적외선 광온도계(IR optical thermometer)와 PID 온도조절기에 의해 소성온도와 시간을 정밀하게 조절할 수 있는 마이크로파 소성장치를 사용하여 BaTiO3 시편을 소성하였다. 또한 마이크로파 소성중에 광섬유 온도계(optical fiber thermoneter)로 시편의 내부온도를 측정하여 같은 조건에서의 일반소성에 의한 시편과 소성특성을 비교한 결과, 소성시간에 따른 빠른 입성장속도과 큰 결정립경을 가졌으며, 온도에 따른 유전성질의 변화는 20~16$0^{\circ}C$의 측정범위에서 같은 경향을 보였다. The microwave sintered BaTiO3 samples were obtained by using the microwave sintering device which can precisely control the sintering temperature and the sinter time by using IR optical thermometer and PID temperature controller. During microwave sintering the internal temperature of samples were mesur-ed by the optical fiber thermometer to compare the sintering behaviors between microwave- and con-ventionally sintered ones. The former showed the faster rate of grain growth with sintering time and the larger grain size than the latter. Also they showed the similar pattern of dielectric properties with tem-perature changes from 2$0^{\circ}C$ to 16$0^{\circ}C$.
Rf-magnetron Sputtering 장치에 의해 제작된 SiO<sub>2</sub>가 도핑된 ZnO 박막의 전기적 및 광학적 특성
배강,손선영,홍재석,김화민,Bae, Kang,Sohn, Sun-Young,Hong, Jae-Suk,Kim, Hwa-Min 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.11
In this study, the electrical and optical properties of $(SiO_2)_x(ZnO)_{100-x}$ (SZO) films prepared on the coming 7059 glass substrates by using rf-magnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates of the SZO film with $SiO_2$ content of 3 wt.% is $4\;{\AA}/s$. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap were decreased from 3.52 to 3.33 eV as an increase the deposition thickness. X-ray diffraction patterns showed that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO film with the $SiO_2$ contents of 2 wt.% showed the resistivity of about $3.8{\times}10^{-3}\;{\Omega}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.
집광형 태양열 집열기의 순간효율측정 및 일일효율산출에 관한 연구
배강,조서현,이순명 한국태양에너지학회 1985 한국태양에너지학회 논문집 Vol.5 No.1
This study includes the measurement of instantaneously thermal efficiency of the concentrating solar collector with 2-axes type solar tracker which was developed lately by domestic solar collector maker. Because it has very low heat loss coefficient, it is useful for high operating temperature and low ambinent temperature.. Also this study includes the calculation of it's a11-day efficiency compared with flat plate type solar collector using the variables of operating temperature and clearance ratio when it is used for space heating. During the calculation, the meteorological data are used in accordance with houly mean data in Korea and specially direct radiation data are predicted according to monthly extraterristrial ratio data. We found that the concentrating solar collector have high performence in winter season which low ambinent temperature and relatively high clearence ratio.
대향타겟식 스퍼터링 장치의 공정 조건에 따른 SiO<sub>2</sub> 가스 차단막의 특성
배강,왕태현,손선영,김화민,홍재석,Bae, Kang,Wang, Tae-Hyun,Sohn, Sun-Young,Kim, Hwa-Min,Hong, Jae-Suk 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.7
For the silicon oxide $(SiO_x)$ films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration$(O_2/Ar+O_2)$ introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the $SiO_x$ films are as follows: $d_{TS}\;and\;d_{TT}$ are 90mm and 120mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3%. Under this optimum conditions, it was found that the $SiO_x$ film was grown with a very high deposition rate of $250{\AA}$/min by rf-power of $4.4W/cm^2$, which was significantly enhanced as compared with a deposition rate (${\sim}55{\AA})$/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.