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김진수,박종극,백영준,김원목,정증현,성태연 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.10
ZTO films are known to be feasible to form amorphous phase, which provides a smooth surface morphology as well as etched side wall, when deposited by conventional sputtering technique, and therefore have a potential to be applied for the transparent thin film transistors. In this study, ZTO thin films were prepared by combinatorial sputtering of ZnO and SnO<SUB>2</SUB> targets, and the dependence of their electrical and optical properties on the composition and deposition parameters was examined. The Sn content in the films varied in the range of 35 ~ 85 at.%. Deposition was carried out at room temperature, 150 and 300 ℃, and the oxygen content in sputtering gas varied from 0 to 1 vol.%. Sn-rich films had better electrical properties, but showed large oxygen deficiency when deposited at low oxygen partial pressure. ZTO films with Sn content lower than 55 at.% had good optical transmission, but the electrical properties were poor due to very low carrier concentration. High Hall mobility of larger than 10 cm<SUP>2</SUP>/Vs could be obtained in carrier density range 10<SUP>17</SUP>~ 10<SUP>20</SUP> cm<SUP>-3</SUP>, and etching rate was measurable for film with Sn content up to 70 at.% by suing a diluted HCl solution, indicating that there is a good possibility of utilizing ZTO films for device application.
비대칭 마그네트론 스퍼터링 방법에 의한 질화붕소막의 증착시 반응실내의 초기 수분이 입방정질화붕소 박막의 형성에 미치는 영향
이은숙,박종극,이욱성,성태연,백영준 한국세라믹학회 2012 한국세라믹학회지 Vol.49 No.6
The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at −60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - N2 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at 250oC as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.