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PECVD SiN 막의 절연파괴 전계분포의 통계적 고찰
김용우,성영권,김천섭 고려대학교 공학기술연구소 1990 고려대학교 생산기술연구소 생기연논문집 Vol.26 No.1
In this paper, we evaluated the breakdown and TDDB characteristics of ammonia free PECVD SiN films which studied widely as a gate insulator to substitute the silicon dioxide because of it's superior film characteristics with the merit of low temperature process. And also, long term insulator breakdown reliability is described by examing time dependent dielectric breakdown under positive voltage. Failure times against electric field are examined and acceleration factors are obtained for each case. Based on the experimental data, breakdown wear out limitation for MNS in characterized.