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ATM 스위치에서 셀 손실률 감소를 위한 개선된 동적 임계치 기법
김양섭(Yang Seob Kim),권혁인(Hyuck In Kwon),김영찬(Young Chan Kim) 한국정보처리학회 2000 정보처리학회논문지 Vol.7 No.3
In a shared memory ATM switch with output queueing, queues share space flexibly in the common cell buffer. Buffer management schemes are needed to fairly regulate the sharing of memory among different output port queues. Of the conventional schemes, Static Threshold is simple but not efficient and does not adapt to the changing of traffic conditions. Pushout is the most efficient and adaptive scheme but very difficult to implement. Dynamic Threshold scheme combines the simplicity of Static Threshold and the adaptability of Pushout. In the VBR traffic, both high priority and low priority vells are generated. However, in Dynamic threshold, high priority cells are not protected when overload occurs. It consequently degrades the performance of the shared memory ATM switch. In this paper, we propose a buffer management scheme which combines the Dynamic Threshold and the Non-Selective Pushout. This scheme is called an Advanced Dynamic Threshold. In this scheme, high priority cells are protected from being discarded when overload condition happens. When overflow occurs in the buffer, Non-Selective Pushout is applied.
IGTO 박막 트랜지스터의 채널층 두께에 따른 양성자 빔 조사의 영향
황성현(Seong-Hyun Hwang),신민규(Min-Gyu Shin),이동호(Dong-Ho Lee),차현석(Hyun-Seok Cha),정환석(Hwan-Seok Jeong),김대환(Dae-Hwan Kim),권혁인(Hyuck-In Kwon) 대한전자공학회 2021 대한전자공학회 학술대회 Vol.2021 No.6
In this study, we investigated the effects of film thickness (t<sub>ch</sub>) on the radiation damage of indium-gallium-tin oxide (IGTO) thin films and radiation tolerance of high-mobility IGTO thin-film transistors (TFTs). The radiation tolerance of the TFTs was evaluated using a 5MeV proton beam at a fixed dose of 10<sup>13</sup> cm<sup>-2</sup>. Using t<sub>ch</sub> values of 12, 27, and 42 nm, the IGTO TFT with the 12nm thick channel layer exhibited the best electrical performance and radiation tolerance. The radiation tolerance significantly decreased as t<sub>ch</sub> increased. To elucidate the mechanism responsible for the observed phenomena, the physical and chemical properties of the IGTO thin films with different values of t<sub>ch</sub> were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy before and after the proton beam irradiation