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열처리에 의하여 p-형으로 반전된 반절연성 GaAs의 전기적 특성
고석중,최병두,박승환,임한조 대구효성가톨릭대학교 자연과학연구소 1994 基礎科學硏究論集 Vol.1994 No.1
크롬이 첨가된 GaAs와 불순물이 첨가되지 않은 GaAs의 두 가지 반절연성(semi-insulating : SI) GaAs웨이퍼의 열처리에 의한 특성 변화를 비교 검토하였다. 수소분위기 하의 열처리로 두 시료는 모두 p 형으로 반전되었고 다같이 Cu_Ga 준위가 밭견되었으나, 온도에 따른 자유양공의 농도변화는 시료의 보상율에 따라서 큰차이를 보였다. 불순물이 첨가되지 않은 Sl GaAs인 경우 77K 근방에서 자유양공의 농도는 1×10^15cm^-3로 일정한 값을 가지며 Cu_Ga 및 C_As 준위가 관측되었다. 반먼에 크롬이 첨가된 SI GaAs의 경우, 온도에 따른 자유양공농도의 변화가 크며 Cu_Ga 준위만이 관측되었다. 앙공의 이동도도 77K에서 각각 6000cm^2/V·sec 및1000cm^2/V·Sec로 서로 큰 차이를 보였다. 이와 같은 두 시료의 특성차이는 각 시료의 보상윤의 차이에 의한 것으로 해석할 수 있었으며, 한편 GaAs의 전형적 깊은준위인 EL2의 수소화 현상은 확인할 수 없었다. Electrical properties of heat-treated Cr-doped and undoped semi-insulating (Sl) GaAs were investigated. Both of the samples have Cu_Ga acceptor level after the heat treatment and the hole concentration of each sample shows different temperature dependence. The hole concentration as a function of reciprocal temperature for undoped Sl GaAs shows a plateau of 1×10^15cm^-3 around 77K and shallow level of C_As is found in this sample. On the other hand. Cr-doped Sl GaAs has only one Cu_Ga level. The hole molilities of each sample at 77K are 6000 cm^2/V·sec and 1000 cm^2/V·sec, respecti-vely. The discrepancies between these two types of Sl GaAs can be explained by the compensation ratio difference due to the different donor concentrations. There is no evidence that the concentration of EL2 level is reduced by the hydrogen passivation.
고석중(Suck Joong Go),박운찬(Woon Chan Park) 한국체육철학회 2001 움직임의철학 : 한국체육철학회지 Vol.9 No.1
The purpose of this study is to investigate leisure value of national athletes. For this purpose, this study is to examine leisure attitude of an national athletes. 154 national athletes were selected using a simple random sampling method. A questionnaire of leisure attitude scale made by Beard & Reghed in 1982 was adopted after being adapted to national athletes of korea. Statistics employed in the study were Frequency Analyssis, Descriptive Analysis. On the basis of the results analysed, the conclusions were drawn as follows; All of the leisrue attitude in national athletes were neutral, being neither positive nor negative. That is, it could be seen that the National athletes did not have positive toward leisure attitude.
박승환,고석중,최병두 대구효성가톨릭대학교 자연과학연구소 1989 基礎科學硏究論集 Vol.3 No.-
The external quantum efficiency of Si-doped GaAs light-emitting diodes (LED) is measu-red by a calibrated sphere at 300k. The efficiency is maximum at Si concentration of about 1 at.% , and this can be explained by relations between an internal efficiency and a potential well in HDSC (heavily-doped and strongly-compensated) GaAs semiconductors. In the fabrication of diodes, the width of the p-type side influences the efficiency of diodes because the light is mainly emitted in the P0- region. The low cooling rate and the low baking time in the growth contributethe increase of the efficiency. In these conditions the lateral efficiency of 2.5 at.% is obtai-ned
Si 이 첨가된 Al_xGa_1-xAS LED 의 효율과 발광특성
박승환,고석중,최병두 대구효성가톨릭대학교 자연과학연구소 1990 基礎科學硏究論集 Vol.4 No.-
An investigation was made of radiative mechanisms and efficiencies of Si-doped AlxGal-xAs light-emitting diodes prepared by a single-step LPE technique. Two peaks are observed in the electroluminescence (EL) spectra, and peak A always dominates peak B. As atemperature increases, the radiative mechanism of peak A changes form Tail-Impurity(Tl)channel to Band-Impurity(Bl) channel. However, that of peak B is predominantly Bl channel independent of the temperature. The effciency is nearly independent of x at77 K, which is well explained by the radiative mechanisms of peak A.