Recently, flexible displays have received considerable attention because they can be applied to mobile and wearable electronic products such as smart phones, automotive displays, and wearable smart devices. With the next generation display, smart glas...
Recently, flexible displays have received considerable attention because they can be applied to mobile and wearable electronic products such as smart phones, automotive displays, and wearable smart devices. With the next generation display, smart glasses and smart lenses enable augmented reality to show natural scene information behind glasses or lenses, and smart watches can check vital signs or other health information measured by wearable sensors in real time. Light-emitting diodes (LEDs) made in fiber form can be applied to wearable displays in fabrics and cloths, and very thin displays can be attached to human skin in the form of electronic tattoos. Transparent flexible displays can be applied to smart windows or digital signage, and bendable displays can be used as foldable phones or foldable tablets with adjustable screen size. Flexible displays with form factors will be developed, and the main technical goal of this next-generation display research field is to develop LEDs with excellent performance.
QLED (quantum dot light emitting diode) has excellent color purity, adjustable emission wavelength, and narrow emission bandwidth. And because of the simple solution process, it has attracted great attention, and by optimizing the material synthesis and structural design of the light emitting layer, QLED devices have achieved impressive development over the past 20 years, but there is still room for improvement of electron transport and electron-hole balance. In QLEDs, electron transport is also an important process for determining brightness and efficiency. ZnO NPs are generally used as electron transport layers due to their relatively high carrier mobility advantages over amorphous materials or organic electron transport layers. However, the higher electron mobility of ZnO NPs promotes electron transfer, charge recombination, and lower driving voltage of QLED, and the high work function decreases overall efficiency due to charge imbalance in QD / ZnO NPs structure, and the hole in the light emitting layer More electrons accumulate than holes, causing fluorescence quenching of quantum dots. In order to compensate for this, a structure having excellent electron-holes is required.
Therefore, in this research, Zn1-xMgxO NPs are used as the electron transport layer to increase the efficiency of QLEDs to develop LEDs with high performance, which is the technical goal of next-generation display research. QLED device characteristics evaluation was conducted. It was. The structure of the device is Ag / PEDOT:PSS / PVK / QDs / Zn1-xMgxO NPs / Ag, turn-on voltage is 6.5 V, maximum brightness is 220087.8 cd/m2, maximum luminous efficiency is 56.0 cd/A, maximum external quantum The efficiency was 14.43 % and the maximum power efficiency was 21.6 lm/W. The Zn1-xMgxO NPs magnesium content showed lower current density, but the brightness, luminous efficiency, external quantum efficiency and power efficiency increased. do. Through this, the electron mobility of Zn1-xMgxO NPs was lower than that of ZnO NPs due to oxygen vacancies, and it was confirmed that the electron-hole balance was achieved by solving the charge imbalance.