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        Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses

        Yang Zhikang,Wen Lin,Li Yudong,Zhou Dong,Wang Xin,Ding Rui,Zhong Meiqing,Meng Cui,Fang Wenxiao,Guo Qi 한국전자파학회 2024 Journal of Electromagnetic Engineering and Science Vol.24 No.2

        With the electromagnetic environment becoming increasingly complex, it is crucial to address the risk posed by electromagnetic pulse, which critically impairs the performance and reliability of electronic systems based on complementary metal oxide semiconductor (CMOS) image sensors. In this context, research on the failure types of CMOS image sensors in a high-power electromagnetic environment, caused by strong electromagnetic pulses and the rapid evaluation method of interference immunity, has garnered significant interest. This paper conducts electromagnetic pulse simulation experiments on CMOS image sensors to first study their failure types, such as image abnormalities and functional interruption, and then identify the corresponding failure criteria. Furthermore, this study builds on the small sample test evaluation method to investigate the interference threshold of functional interruptions in CMOS image sensors by calculating the failure probability at different field strengths. The obtained data were combined with the Weibull distribution function for fitting, the results of which found the interference threshold to be at 40.4 kV/m. The findings of this study provide a basis for evaluating the survivability of CMOS image sensors and their associated reinforcement technology in high-power electromagnetic environments.

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        Synthesis and Characterization of a Fluid-Like Novel Aniline Pentamer

        Mengkui Wang,Jing Huang,Quanling Yang,Zhikang Liu,Lijie Dong,Shan Wang,Chuanxi Xiong 한국고분자학회 2018 Macromolecular Research Vol.26 No.3

        A fluid-like novel aniline pentamer was synthesized by oxidative coupling and chemically doped with nonylphenol polyoxyethylene ether sulfate (NPES). The chemical structure, morphology, rheological behavior and conductivity of the assynthesized aniline pentamer were investigated. Unlike conventional aniline oligomers, this aniline pentamer exhibited a fluid-like behavior in the absence of any solvent at room temperature. Moreover, the aniline pentamer fluid showed liquid crystal characteristics. Combination of the fluid-like behavior, liquid crystal characteristics and good conductivity makes the aniline pentamer a promising environmentally friendly fluid for various applications such as field-effect transistors, liquid crystal devices, electrorheological materials, corrosion protection and other devices requiring electroactivity. This work provides a facile way to synthesizing flowable aniline oligomers with liquid crystal characteristics.

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        Error compensation for snake arm maintainer under variable loads

        Guodong Qin,Huapeng Wu,Aihong Ji,Huan Shen,Qian Li,Qingfei Han,Zhikang Yang,Shikun Wen 대한기계학회 2023 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.37 No.2

        The cable-driven snake arm maintainer (SAM) simplifies the electronics of the entire snake arm and is well suited for operation in narrow and high-risk environments. However, the structural features of the SAM, the large slenderness ratio and the effects of variable loads and rigid-flexible coupling deformation lead to large end position error. In order to improve the positional accuracy, a joint space error compensation model of a SAM is constructed using the matrix differentiation method. The error parameters under different loads and different poses are identified based on the principles of variable parameter error compensation and a linearized variable-load variable-parameter model. Parameter errors are then calculated by the Levenberg-Marquardt nonlinear damped least-squares algorithm. Finally, we verify the effectiveness of the proposed algorithm by simulation and error compensation experiments. The results of the study provide a theoretical basis for further accuracy improvement and application expansion of the SAM.

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