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Ⅲ-Ⅴ족 MOCVD 공정의 열전달 및 필름 성장에 대한 연구
임익태(Ik-Tae Im),Yukihiro Shimogaki 대한기계학회 2004 대한기계학회 춘추학술대회 Vol.2004 No.4
Film growth rate of InP and GaAs using TMI, TMG, TBA and TBP is numerically predicted and compared to the experimental results. Obtained results show that the film growth rate is very sensitive to the thermal condition in the reactor. To obtain exact thermal boundary conditions at the reactor walls, we analyzed the gas flow and heat transfer in the reactor including outer tube as well as the inner reactor parts using a full three-dimensional model. The results indicate that the exact thermal boundary conditions are important to get precise film growth rate prediction.
Effects of Thermal Contact Resistance on Film Growth Rate in a Horizontal MOCVD Reactor
Im Ik-Tae,Choi Nag Jung,Sugiyama Masakazu,Nakano Yoshiyaki,Shimogaki Yukihiro,Kim Byoung Ho,Kim Kwang-Sun The Korean Society of Mechanical Engineers 2005 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.19 No.6
Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.
Effects of Thermal Contact Resistance on Film Growth Rate in a Horizontal MOCVD Reactor
Ik-Tae Im,Nag Jung Choi,Masakazu Sugiyama,Yukihiro Shimogaki,Byoung Ho Kim,Kwang-Sun Kim 대한기계학회 2005 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.19 No.6
Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.