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Takuya Ashitomi,Taisei Harada,Tatsuya Okada,Takashi Noguchi,Osamu Nishikata,Atsushi Ota 한국정보디스플레이학회 2017 Journal of information display Vol.18 No.4
Proposed in this study and fabricated on a glass substrate without adopting impurity doping were p-channel polycrystalline silicon (Si) thin-film transistors (TFTs) with a metal source/drain (S/D) electrode. The amorphous 50-nm-thick Si films deposited on a glass substrate via plasma-enhanced chemical vapor deposition were polycrystallized using blue laser diode annealing. Gold (Au), a highwork- function metal, was evaporated for the S/D electrode directly onto the Si channel layer. As a result of the TFT formation, the typical Id–Vg characteristics of the p-channel TFT were successfully obtained. In addition, after hydrogenation at 200°C, the drain current drastically increased. The 14 cm2/Vs effective field effect hole mobility was deduced at the drain voltage of −1V.