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        Development of CNT-dispersed Si<sub>3</sub>N<sub>4</sub> Ceramics by Adding Lower Temperature Sintering Aids

        Matsuoka, Mitsuaki,Yoshio, Sara,Tatami, Junichi,Wakihara, Toru,Komeya, Katsutoshi,Meguro, Takeshi The Korean Ceramic Society 2012 한국세라믹학회지 Vol.49 No.4

        The study to give electrical conductivity by dispersing carbon nanotubes (CNT) into silicon nitride ($Si_3N_4$) ceramics has been carried out in recent years. However, the density and the strength of $Si_3N_4$ ceramics were degraded and CNTs disappeared after firing at high temperatures because CNTs prevent $Si_3N_4$ from densification and there is a possibility that CNTs react with $Si_3N_4$ or $SiO_2$. In order to suppress the reaction and the disappearance of CNTs, lower temperature densification is needed. In this study, $HfO_2$ and $TiO_2$ was added to $Si_3N_4-Y_2O_3-Al_2O_3$-AlN system to fabricate CNT-dispersed $Si_3N_4$ ceramics at lower temperatures. $HfO_2$ promotes the densification of $Si_3N_4$ and prevents CNT from disappearance. As a result, the sample by adding $HfO_2$ and $TiO_2$ fired at lower temperatures showed higher electrical conductivity and higher bending strength. It was also shown that the mechanical and electrical properties depended on the quantity of the added CNTs.

      • KCI등재

        Development of CNT-dispersed Si3N4 Ceramics by Adding Lower Temperature Sintering Aids

        Mitsuaki Matsuoka,Sara Yoshio,Junichi Tatami,Toru Wakihara,Katsutoshi Komeya,Takeshi Meguro 한국세라믹학회 2012 한국세라믹학회지 Vol.49 No.4

        The study to give electrical conductivity by dispersing carbon nanotubes (CNT) into silicon nitride (Si3N4) ceramics has been carried out in recent years. However, the density and the strength of Si3N4 ceramics were degraded and CNTs disappeared after firing at high temperatures because CNTs prevent Si3N4 from densification and there is a possibility that CNTs react with Si3N4 or SiO2. In order to suppress the reaction and the disappearance of CNTs, lower temperature densification is needed. In this study, HfO2 and TiO2 was added to Si3N4-Y2O3-Al2O3-AlN system to fabricate CNT-dispersed Si3N4 ceramics at lower temperatures. HfO2 promotes the densification of Si3N4 and prevents CNT from disappearance. As a result, the sample by adding HfO2 and TiO2 fired at lower temperatures showed higher electrical conductivity and higher bending strength. It was also shown that the mechanical and electrical properties depended on the quantity of the added CNTs.

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