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CHF₃ / C₂F6 플라즈마에 의한 실리콘 표면 잔류막의 특성
권광호(K.-H. Kwon),박형호(H.-H. Park),이수민(S. M. Lee),강성준(S. J. Kang),권오준(O.-J. Kwon),김보우(B.W. Kim),성영권(Y.-K. Sung) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.1
실리콘을 CHF₃/C₂F_6 가스 플라즈마를 이용하여 식각하면 실리콘위에 탄소, 불소 및 산소로 이루어진 잔류막이 형성된다. 이 잔류막을 XPS로 분석한 결과 탄소는 C-Si, C-Si, C-C/H, C-CF_x(x≤3), C-F, C-F₂, C-F₃ 결합을 하고 있으며, 불소는 F-Si, F-C 및 F-O 결합으로 이루어져 있음을 알았다. 한편 산소는 O-Si 및 O-F 결합으로, 실리콘은 Si-Si, Si-C 및 Si-O 결합상태를 나타낸다. 잔류막의 수직분포 연구를 통하여 Si-O 및 Si-C 결합이 탄소와 불소의 결합층 아래에 존재하고, 잔류막의 표면부에 F-O 결합이 분포함을 알았다. 또한 건식식각 변수가 잔류막 형성에 미치는 영향이 조사되었으며 CHF₃/C₂F_6 가스 유량비, RF power 벚 압력 등이 잔류막의 두께, 조성비 및 잔류막의 결합상태에 영향을 미침을 알 수 있었다. Si surfaces exposed to CHF₃/C₂F_6 gas plasmas in reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF₃/C₂F_6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-Si, C-C/H, C-CF_x(x≤3), C-F, C-F₂, and C-F₃. The chemical bonding states of fluorine are described with F-Si, F-C, and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF₃/C₂F_6 gas ratio, RF power, and pressure are investigated.
다공질 실리콘 산화법을 이용한 MMIC 기판의 제조 및 그 특성
권오준(O . J . Kwon),김경재(K . J . Kim),이재승(J . S . Lee),이종현(J . H . Lee),최현철(H . C . Choi),이정희(J . H . Lee),김기완(K . W . Kim) 한국센서학회 1999 센서학회지 Vol.8 No.2
Microstrip line was fabricated on the oxidized porous silicon layer which has nearly electrically and chemically identical properties with thermally oxidized silicon layer. Thick oxidized porous silicon layer of few tenth of micrometers was prepared by thermal oxidation of porous silicon layer on silicon substrate. Multi-step thermal oxidation process warm used obtain high quality arid thick oxidised silicon layer and to release thermal stress. Microstrip line warm fabricated on the oxidized porous silicon layer. Its microwave characteristics were measured and the availability for MMIC substrate was investigated.
복사 데이터베이스를 이용한 노즐 출구에서의 스펙트럼 예측
남현재(H.J. Nam),권오준(O.J. Kwon) 한국전산유체공학회 2011 한국전산유체공학회 학술대회논문집 Vol.2011 No.11
Numerical simulations of thermal emission spectra at rocket nozzle exit were performed by using a line-by-line radiation model. In the present study, it was assumed that rocket plume consists of only H<SUB>2</SUB>O and CO<SUB>2</SUB> molecules. The most up-to-date high resolution radiation database, HITEMP2010, was used to obtain the absorption coefficients of the two molecules. The effect of collisional broadening was taken into account so that spectral lines are broadened in the shape of Lorentzian line profile. Spectral emissivity and emissive power were calculated and compared with experimental measurements and other numerical simulation results. Each spectrum of H<SUB>2</SUB>O and CO<SUB>2</SUB> molecules agreed well with other observed spectra and the calculated spectra of the mixture of the two molecules were also agreed well with other numerical results. A spectrum prediction at nozzle exit under a flowing condition was made in the wavelength range of 2 to 10 μm. The result showed good agreement with experimental data but it was slightly underpredicted at the wavelength of 3.5, 4.7 and 5.3 μm. One possible reason for the underprediction at certain wavelengths may be due to the absence of emission of diatomic molecules.