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Reliability-Based Topology Optimization for Different Engineering Applications
Kharmanda, G.,Lambert, S.,Kourdi, N.,Daboul, A.,Elhami, A. Society for Computational Design and Engineering 2007 International Journal of CAD/CAM Vol.7 No.1
The objective of this work is to integrate reliability analysis into topology optimization problems. We introduce the reliability constraint in the topology optimization formulation, and the new model is called Reliability-Based Topology Optimization (RBTO). The application of the RBTO model gives a different topology relative to the classical topology optimization that should be deterministic. When comparing the structures resulting from the deterministic topology optimization and from the RBTO model, the RBTO model yields structures that are more reliable than the deterministic ones (for the same weight). Several applications show the importance of this integration.
M. Khaouani,H. Bencherif,A. Hamdoune,A. Belarbi,Z. Kourdi 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.4
In this paper, we performed a Pseudo-morphic High Electron Mobility Transistors (pHEMT) In0.3 Al0.7 As/InAs/InSb/In0.3 Al0.7 using Silvaco-TCAD. RF and analog electrical characteristics are assessed under high temperature eff ect. The impact of the temperature is evaluated referring to a device at room temperature. In particular, the threshold voltage ( V th ), transconductance ( g m ), and I on / I off ratio are calculated in the temperature range of 300 K to 700 K. The primary device exhibits a drain current of 950 mA, a threshold voltage of −1.75 V, a high value of transconductance g m of 650 mS/mm, I on / I off ratio of 1 × 10 6 , a transition frequency ( f t ) of 790 GHz, and a maximum frequency ( f max ) of 1.4 THZ. The achieved results show that increasing temperature act to decrease current, reduce g m , and I on / I off ratio. In more detail high temperature causes a phonon scattering mechanism happening that determine in turn a reduced drain current and shift positively the threshold voltage resulting in hindering the device DC/AC capability.