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Atomistic view of impurities interacting with a quasi-one-dimensional charge density wave
Oh, Deok Mahn,Yeom, Han Woong American Physical Society 2016 Physical Review B Vol.93 No.23
<P>Atomistic details of the interaction of impurities with quasi-one-dimensional charge density wave (CDW) are revealed by scanning tunneling microscopy. Oxygen and pentacene adsorbates are utilized as strongly and weakly interacting impurities, respectively, on the well-known CDW state of the In atomic wire array on the Si(111) surface. Distinct CDW pinning configurations are identified for oxygen impurities with different atomic structures, indicating the strong pinning. The governing role of local strain field for the strong pinning is elucidated. In contrast, a few different pinning configurations occur for a unique adsorption structure of pentacene indicating a weak pinning. Pentacene molecules commonly induce characteristic phase shifts, which readily couple with other phase defects, in particular, solitons in order to avoid interwire phase misfits. This work provides the mechanism and methodology for the atomic scale control over phases, solitons, and domain boundaries of CDW.</P>
Impurity-Mediated Early Condensation of a Charge Density Wave in an Atomic Wire Array
Yeom, Han Woong,Oh, Deok Mahn,Wippermann, Stefan,Schmidt, Wolf Gero American Chemical Society 2016 ACS NANO Vol.10 No.1
<P>We directly show how impurity atoms induce the condensation of a representative electronic phase, the charge density wave (CDW) phase, in atomic scale with scanning tunneling microscopy. Oxygen impurity atoms on the self-assembled metallic atomic wire array on a silicon crystal condense the CDW locally above the pristine transition temperature. More interestingly, the CDW along the wires is induced not by a single atomic impurity but by the cooperation of multiple impurities. First principles calculations disclose the mechanism of the cooperation as the coherent superposition of the local lattice strain induced by impurities, stressing the coupled electronic and lattice degrees of freedom for the CDW. This opens the possibility of the strain engineering over electronic phases of atomic-scale systems.</P>