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        Process Modeling and Optimization Studies in Drying of Current Transformers

        Subhendu Bhattacharya,Dawid DMelo,Lokesh Chaudhari,Ram Avatar Sharma,Sarojini Swain 한국전기전자재료학회 2012 Transactions on Electrical and Electronic Material Vol.13 No.6

        The vacuum drying process for drying of paper in current transformers was modeled with an aim to develop an understanding of the drying mechanism involved and also to predict the water collection rates . A molecular as well as macroscopic approach was adopted for the prediction of drying rate. Ficks law of diffusion was adopted for the prediction of drying rates at macroscopic levels. A steady state and dynamic mass transfer simulation was performed. The bulk diffusion coefficient was calculated using weight loss experiments. The accuracy of the solution was a strong function of the relation developed to determine the equilibrium moisture content. The actually observed diffusion constant was also important to predict the plant water removal rate. Thermo gravimetric studies helped in calculating the diffusion constant. In addition, simulation studies revealed the formation of perpetual moisture traps (loops)inside the CT. These loops can only be broken by changing the temperature or pressure of the system. The change in temperature or pressure changes the kinetic or potential energy of the effusing vapor resulting in breaking of the loop. The cycle was developed based on this mechanism. Additionally, simulation studies also revealed that the actual mechanism of moisture diffusion in CT’s is by surface jumps initiated by surface diffusion balanced against the surrounding pressure. Every subsequent step in the cycle was to break such loops. The effect of change in drying time on the electrical properties of the insulation was also assessed. The measurement of capacitance at the rated voltage and one third of the rated voltage demonstrated that the capacitance change is within the acceptance limit. Hence,the new cycle does not affect the electrical performance of the CT.

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