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Transfer Characteristics Comparison of HfO₂ Al₂O₃ Deposited InGaZnO Thin Film Transistors
Jongyoon Lee,Byoundeog Choi 한국진공학회 2021 한국진공학회 학술발표회초록집 Vol.2021 No.2
Transfer characteristics of indium-gallium-zinc-oxide thin film transistors (IGZO TFTs) using HfO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> as gate dielectrics were identified. We confirmed that the subthreshold swing of the TFTs with Al<sub>2</sub>O<sub>3</sub> (0.68 V/decade) is lower than that of TFT with HfO<sub>2</sub> (1.27 V/decade). Also, TFT with Al<sub>2</sub>O<sub>3</sub> has higher saturation mobility (µsat) (7.56 cm<sup>2</sup>/Vs) than TFT with Hf02 (2.12 cm<sup>2</sup>/Vs) even though HfO<sub>2</sub> has higher dielectric constant. Because Al<sub>2</sub>O<sub>3</sub> IGZO has lower Nr (5.58 x 10¹² cm<sup>-2</sup>) than that of HfO<sub>2</sub>devices (1.8 x 10 cm<sup>-2</sup>) the carrier scattering in the IGZO channel can be reduced.