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Ultra-low power 1T-DRAM in FDSOI technology
El Dirani, H.,Lee, K.H.,Parihar, M.S.,Lacord, J.,Martinie, S.,Barbe, J-Ch.,Mescot, X.,Fonteneau, P.,Broquin, J.-E.,Ghibaudo, G.,Galy, Ph.,Gamiz, F.,Taur, Y.,Kim, Y.-T.,Cristoloveanu, S.,Bawedin, M. ELSEVIER 2017 MICROELECTRONIC ENGINEERING Vol.178 No.-
<P><B>Abstract</B></P> <P>A systematic study of a capacitorless 1T-DRAM fabricated in 28nm FDSOI technology is presented. The operation mechanism is based on band modulation. The Z<SUP>2</SUP>-FET memory cell features a large current sense margin and small OFF-state current at 25°C and 85°C. Moreover, low power consumption during state ‘1’ writing is achieved with ~0.5V programming voltage. These specifications make the Z<SUP>2</SUP>-FET an outstanding candidate for low-power eDRAM applications.</P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>