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RISS 인기검색어
- 검색키워드
- 저자 : Bouchefra, Yasmina (검색결과 2 건)
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Bouchefra, Yasmina,Sari, Nasr-Eddine Chabane The Korean Institute of Electrical and Electronic 2017 Transactions on Electrical and Electronic Material Vol.18 No.1
This work takes place in the context of the development of a transport phenomena simulation based on group III nitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they have a direct band gap and are relatively large compared to other semiconductors. The main objective of this paper is to study the effect of boron content on the electron transport of the ternary compound $B_xGa_{(1-x)}N$ and the effect of the temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar optical scatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric field for different boron compositions ($B_xGa_{(1-x)}N$), at various temperatures for $B_{0.5}Ga_{0.5}N$. Monte carlo simulation, was employed and the three valleys of the conduction band (${\Gamma}$, L, X) were considered to be non-parabolic. We focus on the interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced to obtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristic changes substantially when the temperature is increased, and a remarkable effect is observed from the boron content in $B_xGa_{(1-x)}N$ alloy and the applied field on the dynamics of holders within the lattice as a result of interaction mechanisms.
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Yasmina Bouchefra,Nasr-Eddine Chabane Sari 한국전기전자재료학회 2017 Transactions on Electrical and Electronic Material Vol.18 No.1
This work takes place in the context of the development of a transport phenomena simulation based on group IIInitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they havea direct band gap and are relatively large compared to other semiconductors. The main objective of this paper isto study the effect of boron content on the electron transport of the ternary compound BxGa(1-x)N and the effect ofthe temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar opticalscatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric fieldfor different boron compositions (BxGa(1-x)N), at various temperatures for B0.5Ga0.5N. Monte carlo simulation, wasemployed and the three valleys of the conduction band (Γ, L, X) were considered to be non-parabolic. We focus onthe interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced toobtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristicchanges substantially when the temperature is increased, and a remarkable effect is observed from the boroncontent in BxGa(1-x)N alloy and the applied field on the dynamics of holders within the lattice as a result of interactionmechanisms.
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