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- 저자 : Biswal Bijaylaxmi (검색결과 1 건)
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Biswal Bijaylaxmi,Mishra Dilip Kumar,Mohapatra Jyoshnarani,Bhuyan Satyanarayan 한국세라믹학회 2022 한국세라믹학회지 Vol.59 No.5
The conventional high-temperature solid-state reaction technique is used to synthesize aluminosilicate ceramics of three different compositions (Al 0.70 Si 0.30 O, Al 0.73 Si 0.27 O, Al 0.75 Si 0.25 O). These aluminosilicate ceramics are systematically investigated by XRD, FTIR, SEM, dielectric, electrical, and UV–visible analysis. The polycrystalline ceramics are well synthesized at a sintering temperature of 1450 °C, confirmed from XRD studies. The IR interferogram reveals the presence of mullite (3Al 2 O 3 2SiO 2 )-type molecules in these aluminosilicate ceramics. The SEM images show the formation of homogeneous microstructures with appreciable density. The room temperature dielectric constant values for Al 0.70 Si 0.30 O, Al 0.73 Si 0.27 O, Al 0.75 Si 0.25 O ceramics are 1.5, 1.8, and 1.7 at 1 MHz frequency with dielectric loss values of 0.02, 0.04, and 0.06 respectively. The ac conductivity spectrum of these samples obeys the Arrhenius equation and the classical correlated barrier hopping model governs the conduction mechanism in these ceramics. Complex impedance analysis confirms the contribution of both grain and grain boundary towards transport processes in these ceramics. The UV–visible spectrum reveals that the synthesized ceramics, Al 0.70 Si 0.30 O, Al 0.73 Si 0.27 O, and Al 0.75 Si 0.25 O have a wide-band-gap of the order of 3.45 eV, 3.42 eV, and 3.39 eV respectively. These ceramics can be preferably used as electronic substrates, packaging material for high-frequency circuits, and infrared transmitting window materials.
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