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Andrews, Jeffrey G.,Buzzi, Stefano,Choi, Wan,Hanly, Stephen V.,Lozano, Angel,Soong, Anthony C. K.,Zhang, Jianzhong Charlie IEEE 2014 IEEE journal on selected areas in communications Vol.32 No.6
<P>What will 5G be? What it will <I>not</I> be is an incremental advance on 4G. The previous four generations of cellular technology have each been a major paradigm shift that has broken backward compatibility. Indeed, 5G will need to be a paradigm shift that includes very high carrier frequencies with massive bandwidths, extreme base station and device densities, and unprecedented numbers of antennas. However, unlike the previous four generations, it will also be highly integrative: tying any new 5G air interface and spectrum together with LTE and WiFi to provide universal high-rate coverage and a seamless user experience. To support this, the core network will also have to reach unprecedented levels of flexibility and intelligence, spectrum regulation will need to be rethought and improved, and energy and cost efficiencies will become even more critical considerations. This paper discusses all of these topics, identifying key challenges for future research and preliminary 5G standardization activities, while providing a comprehensive overview of the current literature, and in particular of the papers appearing in this special issue.</P>
Threshold voltage drifts in silicon nitride chemfets
Andrews, M.K.,S Ko 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
Much has been written about the response times and hysteresis effects of chemfets, but there is less information on long term drift performance, which is an aspect which will significantly affect their general acceptance. To investigate this, CV measurements were done on model gate systems comprising buffer/nitride-oxide/silicon over times of hundreds of hours. We show that the flat-band voltage of this system drifts systematically positive at 1-2 mv/day for both p and n-silicon, due to a build-up of negative charge at the liquid interface. SIMS analysis shows that the initial drift, particularly at high pH, is probably due to charged metal complexes forming on the surface. The longer term drift is electrochemical in origin. It occurs for both p and n silicon, and is related to the electric field across the gate dielectric.
ANDREWS, REX 이화여자대학교 동서교육연구소 1984 East west education Vol.5 No.2
It seems to be the case that authoritarian dogma-ridden or ideology-ridden societies find and define their collective shadows in terms of what is collectively repressed. Seven-teenth century Salem objectified it in witchcraft, McCarthyite America in ‘reds under the beds’, Communist Russia in ‘bourgeois capitalist decadence’, and so on. This is clearly an over-simplification of a complex phenomenon, but the principle is demonstrated. In a liberal democratic society, the need for objectifying a collective shadow in this way is reduced by the increase in individual autonomy. But there is no escaping the need for autonomous individuals to recognize and come to terms with their own individual ‘shadow’ for maximum mental health. And literature, through its symbolic representation of various states of mind with %kick we are invited to identify, is a chief means of achieving this. There is also a need in any society which professes a belief in democracy to be on the alert to resist those shadowy social forces which are always ready, under the shelter of some oversimplifying dogma, to project their own collective shadow onto a convenient scapegoat either within or beyond their borders. Here again imaginative literature has the important function of reminding us that the mysterious uniqueness of every individual makes nonsense of stereotyping classification while(paradoxically) our shared humanity makes it immoral. It is fortunate perhaps that imaginative story-telling and poetry is not entirely dependent upon the book, given the UNESCO estimate that ‘in 1980 there will still be 820 million adult illiterates and a world adult illiteracy rate of 29 percent (6)’. It is possible, given the dogma-ridden state of our world, that an escalation of imaginative literature might prove a better defence for mankind than the three tons of high explosive per head already prepared for the protection of literates and illiterates alike. Whether we make of our world ‘a land of dreams’ or of nightmares lies beyond our individual competence; but teachers and parents have a responsibility to ‘travel hopefully’, and to encourage the development of the self-knowledge and autonomy, imagination, empathy and mutual understanding without which hope would be futile. In this endeavour, although it is no panacea, literature can be a help.
Andrews Nsiah Ashong,Mokyoung Lee,Sung‑Tae Hong,Youn Seoung Lee,Jeoung Han Kim 대한금속·재료학회 2021 METALS AND MATERIALS International Vol.27 No.4
Both Al and carbon-fiber-reinforced polymer (CFRP) are being investigated as lightweight materials for automobile applications. To form effective hybrid materials from Al and CFRP, strong bonding between these two dissimilar materials is critical. Here, we analyzed the microstructure and tensile shear strength of joints between an Al alloy (AA 6014) and CFRP fabricatedusing refill friction stir spot welding (RFSSW). A maximum tensile shear load of 1.6 kN was measured for untreated AA6014/CFRP specimens. Microscopy images of the Al–CFRP joints exhibited tight bonding along the joint interface withoutany noticeable defects. Moreover, Al–O–C, C–C, and C=O chemical bonds were detected on the tensile–shear fracturesurfaces of both the Al alloy and CFRP sheets using X-ray photoelectron spectroscopy. Micro-mechanical interlocking andchemical bond formation were the key factors contributing to the tensile shear strength of the RFSSW joint. This studydemonstrated that the RFSSW technique is a suitable bonding method for manufacturing metal–polymer hybrid structures.
The odd moments of ranks and cranks
Andrews, G.E.,Chan, S.H.,Kim, B. Academic Press 2013 Journal of combinatorial theory. Series A Vol.120 No.1
In this paper, we modify the standard definition of moments of ranks and cranks such that odd moments no longer trivially vanish. Denoting the new k-th rank (resp. crank) moments by N@?<SUB>k</SUB>(n) (resp. M@?<SUB>k</SUB>(n)), we prove the following inequality between the first rank and crank moments:M@?<SUB>1</SUB>(n)>N@?<SUB>1</SUB>(n). This inequality motivates us to study a new counting function, ospt(n), which is equal to M@?<SUB>1</SUB>(n)-N@?<SUB>1</SUB>(n). We also discuss higher order moments of ranks and cranks. Surprisingly, for every higher order moments of ranks and cranks, the following inequality holds:M@?<SUB>k</SUB>(n)>N@?<SUB>k</SUB>(n). This extends F.G. Garvan@?s result on the ordinary moments of ranks and cranks.
The First Positive Rank and Crank Moments for Overpartitions
Andrews, G.,Chan, S. H.,Kim, B.,Osburn, R. Birkhaeuser Verlag AG 2016 Annals of Combinatorics Vol.20 No.2
<P>In 2003, Atkin and Garvan initiated the study of rank and crank moments for ordinary partitions. These moments satisfy a strict inequality. We prove that a strict inequality also holds for the first rank and crank moments of overpartitions and consider a new combinatorial interpretation in this setting.</P>