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agarwal,Shilpi Jain,김용섭 경남대학교 기초과학연구소 2018 Nonlinear Functional Analysis and Applications Vol.23 No.4
Authors established some (presumably) new fractional integral and Beta trans- form formulas for the generalized extended Appell’s and Lauricella’s hypergeometric func- tions which have recently been introduced by Kim.
agarwal,Priyanka Harjule,Rashmi Jain 장전수학회 2017 Proceedings of the Jangjeon mathematical society Vol.20 No.3
In this paper, we solve a general Volterra-type fractional equation associated with an integral operator involving a product of general class of polynomials and the multivariable H-function in its Kernel. We make use of convolution technique to solve the main equation.On account of the general nature of multivariable H-function and general class of polynomials, We can obtain a large number of integral equations involving products of several useful polynomials and special functions as its special cases. For the lack of space, we record here only two such special cases which involve the product of general class of polynomials SM N & Appell's function F3 and a general class of polynomials. The main result derived in this paper also generalizes the results obtained by Gupta et. al.[2] and Jain[3, p. 102-103, eq. (3.5),eq.(3.6)]
Certain new integral formulas involving the generalized Bessel functions
최준상,Praveen Agarwal,Sudha Mathur,Sunil Dutt Purohit 대한수학회 2014 대한수학회보 Vol.51 No.4
A remarkably large number of integral formulas involving a variety of special functions have been developed by many authors. Also many integral formulas involving various Bessel functions have been pre- sented. Very recently, Choi and Agarwal derived two generalized integral formulas associated with the Bessel function J(z) of the first kind, which are expressed in terms of the generalized (Wright) hypergeometric func- tions. In the present sequel to Choi and Agarwal’s work, here, in this paper, we establish two new integral formulas involving the generalized Bessel functions, which are also expressed in terms of the generalized (Wright) hypergeometric functions. Some interesting special cases of our two main results are presented. We also point out that the results pre- sented here, being of general character, are easily reducible to yield many diverse new and known integral formulas involving simpler functions.
CERTAIN NEW INTEGRAL FORMULAS INVOLVING THE GENERALIZED BESSEL FUNCTIONS
Choi, Junesang,Agarwal, Praveen,Mathur, Sudha,Purohit, Sunil Dutt Korean Mathematical Society 2014 대한수학회보 Vol.51 No.4
A remarkably large number of integral formulas involving a variety of special functions have been developed by many authors. Also many integral formulas involving various Bessel functions have been presented. Very recently, Choi and Agarwal derived two generalized integral formulas associated with the Bessel function $J_{\nu}(z)$ of the first kind, which are expressed in terms of the generalized (Wright) hypergeometric functions. In the present sequel to Choi and Agarwal's work, here, in this paper, we establish two new integral formulas involving the generalized Bessel functions, which are also expressed in terms of the generalized (Wright) hypergeometric functions. Some interesting special cases of our two main results are presented. We also point out that the results presented here, being of general character, are easily reducible to yield many diverse new and known integral formulas involving simpler functions.
Agarwal, Shikha,Agarwal, Dinesh Kumar,Gautam, Naveen,Agarwal, Kshamta,Gautam, Dinesh Chandra Korean Chemical Society 2014 대한화학회지 Vol.58 No.1
In the course of work on new pharmacologically active antimicrobial agents, we have reported the synthesis of a new class of structurally novel derivatives, incorporating two bioactive structures, a benzothiazole and thiazolidin-4-one, to yield a class of compounds having interesting antimicrobial properties. The antimicrobial properties of the synthesized compounds were investigated against bacteria (Staphylococcus aureus and Escherchia coli) and fungi (Candida albicans and Aspergillus niger) using serial plate dilution method. The structure of the synthesized compounds have been established by elemental analysis and spectroscopic data.
CERTAIN INTEGRALS ASSOCIATED WITH GENERALIZED MITTAG-LEFFLER FUNCTION
Agarwal, Praveen,Choi, Junesang,Jain, Shilpi,Rashidi, Mohammad Mehdi Korean Mathematical Society 2017 대한수학회논문집 Vol.32 No.1
The main objective of this paper is to establish certain unified integral formula involving the product of the generalized Mittag-Leffler type function $E^{({\gamma}_j),(l_j)}_{({\rho}_j),{\lambda}}[z_1,{\ldots},z_r]$ and the Srivastava's polynomials $S^m_n[x]$. We also show how the main result here is general by demonstrating some interesting special cases.
Agarwal, Radhe,Sharma, Yogesh,Chang, Siliang,Pitike, Krishna C.,Sohn, Changhee,Nakhmanson, Serge M.,Takoudis, Christos G.,Lee, Ho Nyung,Tonelli, Rachel,Gardner, Jonathan,Scott, James F.,Katiyar, Ram S American Physical Society 2018 Physical review. B Vol.97 No.5
<P>Tin titanate (SnTiO3) has been notoriously impossible to prepare as a thin-film ferroelectric, probably because high-temperature annealing converts much of the Sn2+ to Sn4+. In the present paper, we show two things: first, perovskite phase SnTiO3 can be prepared by atomic-layer deposition directly onto p-type Si substrates; and second, these films exhibit ferroelectric switching at room temperature, with p-type Si acting as electrodes. X-ray diffraction measurements reveal that the film is single-phase, preferred-orientation ferroelectric perovskite SnTiO3. Our films showed well-saturated, square, and repeatable hysteresis loops of around 3 mu C/cm(2) remnant polarization at room temperature, as detected by out-of-plane polarization versus electric field and field cycling measurements. Furthermore, photovoltaic and photoferroelectricity were found in Pt/SnTiO3/Si/SnTiO3/Pt heterostructures, the properties of which can be tuned through band-gap engineering by strain according to first-principles calculations. This is a lead-free room-temperature ferroelectric oxide of potential device application.</P>
EXTENDED HYPERGEOMETRIC FUNCTIONS OF TWO AND THREE VARIABLES
AGARWAL, PRAVEEN,CHOI, JUNESANG,JAIN, SHILPI Korean Mathematical Society 2015 대한수학회논문집 Vol.30 No.4
Extensions of some classical special functions, for example, Beta function B(x, y) and generalized hypergeometric functions $_pF_q$ have been actively investigated and found diverse applications. In recent years, several extensions for B(x, y) and $_pF_q$ have been established by many authors in various ways. Here, we aim to generalize Appell's hypergeometric functions of two variables and Lauricella's hypergeometric function of three variables by using the extended generalized beta type function $B_p^{({\alpha},{\beta};m)}$ (x, y). Then some properties of the extended generalized Appell's hypergeometric functions and Lauricella's hypergeometric functions are investigated.
FIXED POINT THEORY FOR VARIOUS CLASSES OF PERMISSIBLE MAPS VIA INDEX THEORY
Agarwal, Ravi P.,O'Regan, Donal Korean Mathematical Society 2009 대한수학회논문집 Vol.24 No.2
In this paper we use degree and index theory to present new applicable fixed point theory for permissible maps.
Agarwal, Radhe,Sharma, Yogesh,Hong, Seungbum,Katiyar, Ram S IOP 2018 Journal of physics. D, applied physics Vol.51 No.27
<P>We are reporting on the improved ferroelectric and photovoltaic properties of (Nd<SUP>3+</SUP>, V<SUP>5+</SUP>) co-doped (Bi<SUB>0.95</SUB>Nd<SUB>0.05</SUB>)(Fe<SUB>1−<I>x</I> </SUB>V<SUB> <I>x</I> </SUB>)O<SUB>3</SUB> (BNFVO) (<I>x</I> = 0.01, 0.03) thin films grown by PLD. BNFVO thin films showed reduced leakage current, lower optical bandgap, and improved ferroelectricity compared to BFO films, which can be explained by valance change and extinguishing oxygen vacancies due to the doping effect. Piezoresponse force microscopy measurements showed an improved domain back switching in doped thin films indicating that the suppression of oxygen vacancies offset the effect of polarization flipping caused by doping. Further, we found a relatively stable and enhanced photovoltaic effect in BNFVO films with an order of magnitude higher photocurrent and almost doubled photovoltage in comparison to BFO films, which can be explained by less recombination between hopping electrons and oxygen vacancies. Our results demonstrate the significance of dopant selection to suppress the oxygen vacancies for improved ferroelectric and photovoltaic properties of BFO films.</P>