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A D-Band Subharmonically-Pumped Resistive Mixer Based on a 100 nm MHEMT Technology
Y. Campos-Roca,A. Tessmann,H. Massler,A. Leuther 한국전자통신연구원 2011 ETRI Journal Vol.33 No.5
A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a 180-degree power divider structure consisting of a Lange coupler followed by a lambda/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.