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반도체 베이킹 공정시 내부유동이 웨이퍼 온도와 입자거동에 미치는 영향
이진성(Jin Sung Lee),김태규(Tae Gyu Kim),이동우(Dong Woo Lee),신동화(Dong Hwa Shin),임종길(Jong Kill Lim) 대한기계학회 2005 대한기계학회 춘추학술대회 Vol.2005 No.11
In the Baking process during photolithography, a temperature change of wafer on each bake unit induces CD(Critical Dimension) variation and reduces productivity. Thus, maintaining the wafer at a desired temperature, for a desired period of time, may enable uniformity in photo resist hardening and increase the quality of the underlying integrated circuit being manufactured. Also in baking apparatus, purges N₂ and thereby creates air stream a baking chamber while ventilating an internal atmosphere, so that a contaminant, such as a solvent evaporated from the substrate, which contaminates the substrate. In the present research, we have performed thermal and fluid flow analysis in the bake chamber. Computational simulation has been used to understand the effect of purging gas flow pattern on the temperature distributions of wafer and particle behavior. As a result of this, we understand the problems of present bake chamber and propose new design for bake cover to improve the temperature uniformity of wafer and reduce the particle contamination problems.