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플라즈마 화학기상증착법을 이용한다층 그래핀의 저온합성과 성장 메커니즘
윤가영 ( Kayoung Yun ),정다솔 ( Dasol Cheang ),현지연 ( Jiyeon Hyun ),노애란 ( Aeran Roh ),허선 ( Sun Heo ),( Lanxia Cheng ),( Jiyong Kim ),차필령 ( Pil Ryung Cha ),이재갑 ( Jagab Lee ),남호석 ( Ho Seok Nam ) 대한금속재료학회(구 대한금속학회) 2015 대한금속·재료학회지 Vol.53 No.11
Multi-layer graphene is considered to be a potential replacement of copper wiring for LSI (large-scale integration). PECVD (plasma enhanced chemical vapor deposition) is one of the most reliable synthesis techniques to manufacture high-quality, large-scale graphene at low temperature. Compared with thermal CVD graphene, the relatively lower quality of PECVD graphene is its main drawback. In order to suggest a solution for this problem, we studied the growth mechanism of multi-layer graphene deposited onto nickel by PECVD at 400 ℃. We found that both segregation and solution-precipitation models affect the growth behavior of multi-layer graphene. To support this, we analyzed the influences of Ni-film thickness, cooling rate, and plasma energy on multi-layer graphene growth. The results from this study would be useful for optimizing graphene growth conditions for many applications.