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윤형진(Hyungjin Yun),신현범(Hyunbum Sin),정규범(Gyubum Joung) 한국정보기술학회 2005 한국정보기술학회논문지 Vol.3 No.6
High frequency operation for power converter has been one of the major topic for several decades to decrease the size and weight of the power system. The fast switching diode is the solution for high frequency operation of the converter. The faster GaAs Diode than Si diode for switching speed has been used for special application such as mobile communication system. In this paper, We design and implement high power GaAs Diode of 70 V, 10 A values for high power density converter system. The resulted reverse recovery time of the diode is 12.5 nsec and the leakage current of the diode is about 3 ㎂ The tested switching waveform of the converter verify that the designed diode is more applicable for high frequency operation.