RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      검색결과 좁혀 보기

      선택해제
      • 좁혀본 항목 보기순서

        • 원문유무
        • 원문제공처
          펼치기
        • 등재정보
          펼치기
        • 학술지명
          펼치기
        • 주제분류
        • 발행연도
          펼치기
        • 작성언어
        • 저자
          펼치기

      오늘 본 자료

      • 오늘 본 자료가 없습니다.
      더보기
      • 무료
      • 기관 내 무료
      • 유료
      • KCI등재

        CVD Graphene Synthesis on Copper Foils and Doping Effect by Nitric Acid

        오데레사 한국전기전자재료학회 2013 Transactions on Electrical and Electronic Material Vol.14 No.5

        Graphene was obtained on Cu foil by thermal decomposition method. A gas mixture of H2 and CH4 and an ambient annealing temperature of 1,000℃ were used during the deposition for 30 Min., and for the transfer onto SiO2/Si and Si substrates. The physical properties of graphene were investigated with regard to the effect ofnitrogen atom doping and the various substrates used. The G/2D ratio decreased when the graphene became monolayer graphene. The graphene grown on SiO2/Si substrate showed a low intensity of the G/2D ratio, because the polarity of the SiO2 layer improved the quality of graphene. The intensity of the G/2D ratio of graphene doped with nitrogen atoms increased with the doping time. The quality of graphene depended on the concentration of the nitrogen doping and chemical properties of substrates. High-quality monolayer graphene was obtained with a low G/2D ratio. The increase in the intensity of the G/2D ratios corresponded to a blue shift in the 2D peaks.

      • 카본주입 실리콘 산화박막의 탄소량에 따른 누설전류와의 상관성

        오데레사 청주대학교 2009 産業科學硏究 Vol.26 No.2

        The annealed SiOC film of carbon centered system was prepared using bistrimethylsilylmethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of the annealed SiOC film were analyzed by the I-V measurement, FTIR spectra and contact angle. The main bond of 950~1200 cm-1was composed of the Si-C, Si-O-C and Si-O bonds. The leakage current of the annealed SiOC film increased with the increasing of the carbon content, and the drift of the current was similar to the Si-O-C bond content. The contact angle was in inverse proportion to the carbon content.

      • 조명용 LED 소자의 특징

        오데레사 청주대학교 2009 産業科學硏究 Vol.26 No.2

        Recently, it is required the economy and the development of energy sources according to the energy exhausting and global worming. The change of light sources is directly affected with the saving of power consumptions and it has been focused the new light sources. The LED light has low power consumption as a diode with PN junction and is already used for electronic applications such as TFT-LCD, OLED or cell-phones. The LED light composited with 120 chips as a street light was presented for the power consumption of 60 W and of the luminous intensity of 45 lux.

      • XPS Analysis of insulator by ICPCVD ICPCVD방법으로 만든 절연 박막의 XPS 분석

        오데레사 청주대학교 2007 産業科學硏究 Vol.25 No.1

        본 연구에서는 Si-O-C 박막의 화학적인 결합구조의 변화에 대하여 조사하였다. 저유전상수의 Si-O-C 박막은 실리콘 박막위에 ICPCVD 방법에 의해서 증착되었으며 BTMSM 프리커서와 산소의 혼합가스에 의해 제조되었다. 유량비는 10:10 (sccm)이며 열처리 온도가 각각 300oC와 500oC 였다. Si-O-C 박막의 특성에 대한 분석은 XPS 분석기를 이용하였다. Si-CH3 결합은 증착되는 동안 박막내의 Si-O-C 오픈 링크를 증가시켰다. 500oC에서 열처리된 박막은 OH 그룹이 사라졌으며, Si-O 링 링크가 증가하였다. 열처리 후 OH 그룹은 H2O와 Si-O-C 결합을 만들어내면서 유전상수가 감소하였으며, 내부에 나노기공을 만들었다.

      • 반도체 절연막에서 사용되는 SiOC 박막과 SiO2 박막의 차이점

        오데레사 청주대학교 2012 産業科學硏究 Vol.29 No.2

        To define the characteristic of SiOC thin film, the analysis of Si wafer, SiO2 film and SiOC film was performed by using the FTIR spectra. The main bond of 950∼1200 cm-1 and the peak intensity near 800 cm-1 was shown the difference between them. This pecularity can improve the semiconductor device used SiOC thin film as passivation. Because the increasing of an electron affinity due to the carbon atom improves the degree of an amorphous bonding structure in silicon dioxide thin film used in integrated circuit device.

      • 헤어핀 라인 공진필터

        오데레사 청주대학교 2007 産業科學硏究 Vol.25 No.1

        The filter of hairpin type can be designed small but has a demerit which a design method is complex. This paper suggests the method that a hairpin line filter is designed with applying a transmission line method and inverter circuit, accurately calculated the value and the parameter. It is considered about the line have no the mutual coupling element with next line to each other, is calculated a length of electric coupling line about coupling element in each inverter stage from the value and the parameter. In order to show the validity of the proposed design method, band pass filter of small hairpin line is designed at center frequency 2.6 GHz, with Serenade 8.0 software tool and the simulation characteristics are compared with design results.

      • 헤어핀 콤 공진기를 이용한 대역통과 필터 설계

        오데레사,김흥수 濟州大學校 情報通信硏究所 2000 情報通信硏究所論文集 Vol.3 No.-

        The design of bandpass filter using a hairpin resonator limits a characteristic impedance of a transmission line and the length of coupled lines. which shifts a resonance frequency. In accordance with the design of bandpass filter. a line width and gap is calculated from a loapass prototype filter. but an accurate length of lines are not calculated. The line length is decided in accordance with coupling between lines which is not neighborhood using electro-magnetic analysis tool. In this paper. considering of coupling between all of lines an accurate length of lines calculated from a method of a transmission line analysis. The result of simulation is in close agreement with those of design parameter.

      • 유기물박막의 FTIR 분석기술

        오데레사 청주대학교 2010 産業科學硏究 Vol.27 No.2

        Organic thin film was researched by FTIR spectra. The ots treated SiO2 film was changed the chemical properties in accordance with increasing the content of monochlorobenzene. These variations could be defined by the FTIR spectra under range of 800∼1200 cm-1 inspite of most of all samples had similar FTIR spectra. The main bond of 950∼1200 cm-1 in SiOC film deposited by the chemical vapor deposition was separated two bonds after annealing process. Because the content of the ionic bonding decreases. The FTIR spectra about the organic thin film was provided useful informations to recognize the characteristic of chemical and physical properties.

      • 반도체설계공학과 이수체계에 관한 연구

        오데레사 청주대학교 2011 産業科學硏究 Vol.28 No.2

        This study was the establishment of the completion system graph for the department of Semiconductor Design Engineering and researched about the application of attending the lecture for 4 grade students as the reserve university graduate. The students of 4 grade in 2010 do not complete the ABEEK program in spite of the establishment of the completion system. In 2010, 4 grade students as the reserve university graduate tended to complete the culture studies in the last semester. The establishment of the ABEEK program in the future was expected to help the education for students with the quality as the specialist.

      • 공학인증 프로그램의 효율적인 운영방안에 관한 연구

        오데레사 청주대학교 2012 産業科學硏究 Vol.29 No.2

        In this paper, the effective managerial schemes are researched and specific contents of the accreditation criteria those need to be periodically documented are recommended and the effective processes and assessment for the program outcome and complete course are described in detail. The education objective has to be defined clearly, and program outcome and complete course is periodically analyzed due to the necessity, importance, and achievement. The counsel and student portfolio should help to cultivate the student talent as a spectialist. The establishment of the ABEEK program through the improvement of a complete course was expected to help the education for students with the quality as the specialist.

      연관 검색어 추천

      이 검색어로 많이 본 자료

      활용도 높은 자료

      해외이동버튼