TiO2박막의 Open 열자격 전류 특성에 관한 연구

연규호 忠州大學校 2010 한국교통대학교 논문집 Vol.45 No.-

In order to investigate the behaviors of carrier in thin films several characteristics such as thermally stimulated current , electrical conduction was observed on the specimen with 6000 [Å] thick. The evaporation were performed in 14 inch bell jar system evacuated by means of an oil diffusion pump in series with a mechanical pump. The pressure in the bell jar was less than 5×10-7[㎜Hg] the evaporation. In order to show that the preceding analysis of is any validity it is necessary to examine the characteristics of a material, that can be measured over a wide temperature without structural change.

FeBSi박막의 자기적 특성에 관한 연구

延圭浩 忠州大學校 1995 한국교통대학교 논문집 Vol.30 No.2

The magnetic properties of Fe??B??Si?? amorphous thin film which has high saturation magnetization and a low core loss were investigated with conventional annealing. For this experiment, Fe??B??Si?? amorphous thin film was prepared by the thermal evaporation method and conventional annealing were done at various temperature below the crystallization for 30 minutes in Ar gas atmosphere. Magnetic properties were measured by D.C., A.C. Recording Fluxmeter. Maze domain due to internal stress produced by thin film fabrication process prevailed in ascast condition, but maze domains were gradually disappeared and 180˚domains of wave type were observed according to conventional annealing. At the same time, hysteresis curve in magnetization process became smooth without Barkhausen jumps by it.

Ceramic 유전체 박막의 광응답 특성에 관한 연구

延圭浩 忠州大學校 1994 한국교통대학교 논문집 Vol.29 No.2

The evaporation was performed in 14 inch bell jar system evacuated by means of an oil diffusion pump in series with a mechanical pump. The pressure in the bell jar was less than 5 x 10??[mmHg] during the evaporation. The films were formed on platinum substrate having demensions approximately 3 x 4 x 0.2[cm]. The thin films of ceramic dielectric approximately 6,000[??]thick have been formed on platium substrates by evaporation in a vacuum and a subsequent heat treatment in oxygen gass. The photoresponse of samples begins to appear around the wavelength 4,200[??]is nealy equivalent to the band gap energy of TiO₂and the maximum value occurs around 3,600[??].

CdSe 薄膜의 電子 傳導機構와 熱刺檄 電流 特性에 관한 硏究

延圭浩 忠州大學校 1993 한국교통대학교 논문집 Vol.28 No.-

The energy band model of CdSe film device is discussed in relation to the characteristics of thermally stimulated current. Thermally stimulated current is measured in the temperature range of 110。K∼350。K. It is observed that there are two peaks. Peak B seems due to depolarization of donor ions in the depletion layer, and peak A is to the detrapping of trapped electrons in the shallow trap and deep trap, respectively. The electronic conduction mechanisms can be explanined by Ohmic characteristic in region A, space charge limited characteristic in region B, respectively.

열자격 전류에 의한 SiO₂박막의 활성화 에너지 분포특성에 관한 연구

延圭浩 충주대학교 1993 한국교통대학교 논문집 Vol.27 No.-

A new method of measuremeing dielectric propertie as relaxation time of dipole, its activation energy and dielectric constant in very low frequency by thermally stimulated currents is described. Relations between the dielectic properties and thermally stimulated currents are theoretically analyzed, and esperimental results on SiO₂thin films are illustrated. It is shown that due to dipoles having the distributed relaxation time and the activation of dielectric properties of the obtained by computer calculation. It was concluded from the characteristics of the activation energy at the SiO₂thin gilm was distributed continuously in energy level of forbiden gap.

GaAs 반도체 내의 깊은 준위 측정에 관한 연구

연규호 忠州大學校 2012 한국교통대학교 논문집 Vol.47 No.-

Deep level transient spectroscopy (DLTS) has in recent years become a powerful technique in the characterization of semiconductor materials. In particular, the deep defect and impurity levels occurring in GaAs have received considerable attention, because of their adverse influence on the minority carrier lifetimes and efficiencies of electro-optical devices. In this paper, a detailed analysis of the pulsed bias techniques to determine the capture kinetics of the free carriers by deep traps in n type GaAs Schottky diode is introduced. Also a novel experimental technique is proposed to rigorously extract the experimental capture kinetics in the neutral semiconductor from the total capture kinetics; and thus, it is shown it is possible to obtain a correct estimation of the capture rate.

유전체 Al₂O₃ 박막의 도전특성에 관한 연구

연규호 忠州大學校 1999 한국교통대학교 논문집 Vol.34 No.2

Optimum conditions are investigated for the fabrication of Al₂O₃thin film in vapor diposition method, and the conduction mechanisms are inferred from the experimental reults. The conductions meahanism are classfied as follows, (1) to be in accordance with Schottky effect the high electric field, (2) with Poole - Frenkel effect in the middle electric field, and (3) with hopping effect in the low electric field.

진공 증착법으로 제작한 CdSe 박막의 열자격 전류 특성에 관한 연구

연규호 忠州大學校 2004 한국교통대학교 논문집 Vol.39 No.1

In order to investigate the behaviors of carrier in thin films several characteristics such as thermally stimulated current, electrical conduction was observed on the specimen with 8000 [Å] thick. The forming condition of specimen fabricated as electret was 300[^(0)K] as well as 1×10^(-7)~4×10^(-7)[mmHg] of electric field and that the observations on the characteristics of thermally stimulated current were carried out in the temperature range from -100[^(0)C] ] to 80 [^(0)C].

유전체 박막의 절연파괴 특성에 관한 연구

연규호 忠州大學校 2011 한국교통대학교 논문집 Vol.46 No.-

Electrical breakdown in very thin Dielectric films of thickness less than 500Å and sand whiched between Pt and Au metal electrodes has been studied experimentally. Recovery of high resistance of the oxide insulator film has been observed on the application of either a reverse voltage of a high current pulse of just by resting the junction for a few hours after the removal of the applied external voltage. An explanation for the effect is suggested. The breakdown field is found to depend on the insulator thickness, the temperature and the nature of the electrode metal. On the basis of experimental results the mechanisms for electrical breakdown at room temperatures and above, in very thin dielectric films, can be attributed to electronic modified thermal breakdown.

열 자격 전류에 의한 트랩 전하 측정에 관한 연구

延圭浩 忠州大學校 1996 한국교통대학교 논문집 Vol.31 No.2

In order to investigate the aspects of electron trap at the interface state between semiconductor and insulator, measurements of thermally stimulated current were carried out on by Au-SiO₂-Si in the range of temperature between 280[˚K] and 370[˚K], so that a main peak about 330[˚K] was observed. The peak appeared to be originated from detrapping electrons at the interface state of semiconductor surface, furthermore, it was concluded from the characteristics of the observed thermally stimulated current that the electron trap density at the interface was distributed continuously in energy of forbidden gap. Impressed voltage dependent activation energy determined by the initial vise method proposed by T. Hino showed the values between 0.36[eV]∼0.68[eV] and the calculated electron trap density was resulted 2.9×10??[eV?? cm??]∼1.2×10??[eV??cm??] through the proposed method in the paper.