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Effects of Substrate materials on SiC Film Coating by RF Sputtering System
윤한기(HanKi Yoon),문승현(Hyun Moon),김태규(TaeGyu Kim),무라카미 리이치(Ri-Ichi Murakama) 대한기계학회 2010 대한기계학회 춘추학술대회 Vol.2010 No.11
Silicon carbide thin film was coated onto 3 types of materials by RF sputtering system. The substrates were graphite, si and sapphire. Surface roughness of substrate was polished by wet polishing. Coating conditions were 200 W of RF power and 3 mTorr pressure of argon gas. Deposition time was 3 hours in 600℃ temperature. Specimens were heat treated in 1200℃ vacuum chamber. XRD was used for detecting the coated SiC thin film by thin film mode. FE-SEM was used to characterize the microstructure of SiC coating film.