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황성원,Suk-Ho Choi 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.68 No.7
Two kinds of oxide templates, one with and one without undercuts, are employed to study the effect of defects in oxide templates on non-catalytic growth of GaN nanowires (NWs). GaN NWs abnormally grown from the templates containing undercuts exhibit two types of patterns: earlystage growth of premature NWs and abnormally-overgrown (2 μm) NWs. GaN NWs grown on perfectly-symmetric template patterns are highly crystalline and have high aspect ratios (2 5), and their tops are shaped as pyramids with semipolar facets, clearly indicating hexagonal symmetry. The internal quantum efficiency of the well-grown NWs is 10% larger than that of the deformed NWs, as estimated by using photoluminescence. These results suggest that our technique is an effective approach for growing large-area-patterned, vertically-aligned, hexagonal GaN NWs without catalysts, in strong contrast to catalytic vapor-liquid-solid growth, and that good formation of the oxide templates is crucial for the growth of high-quality GaN NWs.
황성원,Hyunho Shin,Bongsoo Lee,Suk-Ho Choi 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.69 No.4
We employ inductively-coupled plasma chemical vapor deposition for non-catalytic growth of graphene on a Si (111) wafer or glass substrate, which is useful for practical device applications of graphene without transfer processes. At a RF power (P) of 500 W under C2H2 flow, defectfree 3 5-layer graphene is grown on Si (111) wafers, but on glass substrate, the layer is thicker and defective, as characterized by Raman spectroscopy and electron microscopy. The graphene is produced on Si (111) for P down to 190 W whereas it is almost not formed on glass for P < 250 W, possibly resulting from the weak catalytic-reaction-like effect on glass. These results are discussed based on possible growth mechanisms.
우마르아메드,Young Jin Choi,서은경,A. Al-Hajry,한윤봉 한국물리학회 2008 Current Applied Physics Vol.8 No.6
Various kind of ZnO nanostructures such as nanowires, nanonails and nanocombs were synthesized by the thermal evaporation process onto the steel alloy substrate without the use of metal catalyst or any additives. Detailed structural characterizations indicated that the grown products possess a single crystallinity with the wurtzite hexagonal crystal structure. Presence of strong optical-phonon E2 mode, in all the cases, presents the good crystallinity with the wurtzite hexagonal phase for the deposited products. Additionally, appearance of dominated, strong and sharp UV emission in the room-temperature photoluminescence spectra confirmed the good optical properties for the grown nanostructures. A vapor–solid growth mechanism has been proposed for the growth of the nanostructures.
Successful Fabrication of GaN Epitaxial Layer on Non-Catalytically-grown Graphene
황성원,Suk-Ho Choi 대한화학회 2016 Bulletin of the Korean Chemical Society Vol.37 No.7
Sapphire is widely used as a substrate for the growth of GaN epitaxial layer (EPI), but has several drawbacks such as high cost, large lattice mismatch, non-flexibility, and so on. Here, we first employ graphene directly grown on Si or sapphire substrate as a platform for the growth and lift-off of GaN-light-emitting diode (LED) EPI, useful for not only recycling the substrate but also transferring the GaN-LED EPI to other flexible substrates. Sequential standard processes of nucleation/recrystallization of GaN seeds and deposition of undoped (u-) GaN/AlN buffer layer were done on graphene/substrate before the growth of GaN-LED EPI, accompanied by taping and lift-off of u-GaN/AlN or GaN-LED EPI. This approach can overcome the limitations by the catalytic growth and transfer of graphene, and make the oxygen-plasma treatment of graphene for the growth of GaN EPI unnecessary.