http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 주제어 : III-nitride nanowires (검색결과 3 건)
- 무료
- 기관 내 무료
- 유료
-
III-nitride nanowires for solar light harvesting: A review
Chatterjee, U.,Park, Ji-Hyeon,Um, Dae-Young,Lee, Cheul-Ro PERGAMON 2017 RENEWABLE AND SUSTAINABLE ENERGY REVIEWS Vol.79 No.-
<P><B>Abstract</B></P> <P>The world needs economical and sustainable alternate energy sources to combat the irreversible phenomenon like global warming. Solar photovoltaic technology, which converts sunlight directly to electricity, is the most potential candidate for alternate energy source. On the other hand, increasing global pollution due to energy emission compels the worldwide researcher community to deliberate over various green fuels. Recently due to numerous advancements hydrogen fuel cells are thought to be the green power source of 21st century and may develop the hydrogen economy. However, despite of many promising breakthroughs energy production harvesting solar light does not find wide spread applications due to their low efficiency associated with unsuccessful utilization of entire solar spectrum which leads researchers to consider materials with multi energy band gap. Due to their unique property of band gap tuning (~6.2eV for AlN to ~0.65eV for InN) III-nitride nanowire structures have been extensively investigated in the past decade in pursuit of multi band gap materials. Intensive research efforts have been paid into studying GaN, InN, InGaN, AlN and their different compositions. It is clear that this material family has enormous potential in harvesting solar energy to light the new dawn of clean and sustainable energy sources. In this article, we present an overview on recent advancements in III-nitride solar energy devices. We have made a review for more than 200 articles in this regard. All the recent developments in realizing III-nitride nanostructures and novel yet recent advances in III-nitride solar devices are reviewed in and its subsequent subsections. The III-nitride nanowire photovoltaic devices are discussed in whereas deals with the current progresses in artificial photosynthesis involving III-nitride nanowires. Finally in the present challenges in realizing high efficiency III-nitride nanowire solar energy devices are summarized along with paths for future work.</P>
-
Jung, Woo-Sik,Ra, Choon-Sup,Min, Bong-Ki Korean Chemical Society 2005 Bulletin of the Korean Chemical Society Vol.26 No.1
Gallium nitride (GaN) powders and nanowires were prepared by using tris(N,N-dimethyldithiocarbamato)gallium(III) (Ga(DmDTC)$_3$) and tris(N,N-diethyldithiocarbamato)gallium(III) (Ga(DeDTC)$_3$) as new precursors. The GaN powders were obtained by reaction of the complexes with ammonia in the temperature ranging from 500 to 1100 ${^{\circ}C}$. The process of conversion of the complexes to GaN was monitored by their weight loss, XRD, and $^{71}$Ga magic-angle spinning (MAS) NMR spectroscopy. Most likely the complexes decompose to $\gamma$ -Ga$_2$S$_3$ and then turn into GaN via amorphous gallium thionitrides (GaS$_x$N$_y$). The reactivity of Ga(DmDTC)$_3$ with ammonia was a little higher than that of Ga(DeDTC)$_3$. Room-temperature photoluminescence spectra of asprepared GaN powders exhibited the band-edge emission of GaN at 363 nm. GaN nanowires were obtained by nitridation of as-ground $\gamma$ -Ga$_2$S$_3$ powders to GaN powders, followed by sublimation without using templates or catalysts.
-
정우식,나춘섭,Bong-Ki Min 대한화학회 2005 Bulletin of the Korean Chemical Society Vol.26 No.1
Gallium nitride (GaN) powders and nanowires were prepared by using tris(N,N-dimethyldithiocarbamato)gallium(III) (Ga(DmDTC)3) and tris(N,N-diethyldithiocarbamato)gallium(III) (Ga(DeDTC)3) as new precursors. The GaN powders were obtained by reaction of the complexes with ammonia in the temperature ranging from 500 to 1100 oC. The process of conversion of the complexes to GaN was monitored by their weight loss, XRD, and 71Ga magic-angle spinning (MAS) NMR spectroscopy. Most likely the complexes decompose to γ -Ga2S3 and then turn into GaN via amorphous gallium thionitrides (GaSxNy). The reactivity of Ga(DmDTC)3 with ammonia was a little higher than that of Ga(DeDTC)3. Room-temperature photoluminescence spectra of asprepared GaN powders exhibited the band-edge emission of GaN at 363 nm. GaN nanowires were obtained by nitridation of as-ground γ -Ga2S3 powders to GaN powders, followed by sublimation without using templates or catalysts.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
