http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Hot-Carrier Degradations of High-Vaotage LDMOS Transistors With New Drain Structures
Park, Hoon Soo 위덕대학교 부설 전자기술연구소 1998 전자기술연구소 논문집 : 위덕대 Vol.2 No.1
As the rapid scaling down and high-current density of power LDMOS transistor, the hot-carrier induced electrical parameter and long-term reliability degradations have become a major concern. In this work, we proposed a new high-voltage nLDMOS transistor with convexed drain structure in order to reduce the hot-carrier generation at the extended drain junction and hot-carrier induced parameter degradations depending on the different drain structures were investigated in detail.