As the rapid scaling down and high-current density of power LDMOS transistor, the hot-carrier induced electrical parameter and long-term reliability degradations have become a major concern. In this work, we proposed a new high-voltage nLDMOS transist...
As the rapid scaling down and high-current density of power LDMOS transistor, the hot-carrier induced electrical parameter and long-term reliability degradations have become a major concern. In this work, we proposed a new high-voltage nLDMOS transistor with convexed drain structure in order to reduce the hot-carrier generation at the extended drain junction and hot-carrier induced parameter degradations depending on the different drain structures were investigated in detail.