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Ismail, Agus,Cho, Jin Woo,Park, Se Jin,Hwang, Yun Jeong,Min, Byoung Koun Korean Chemical Society 2014 Bulletin of the Korean Chemical Society Vol.35 No.7
$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.
Agus Ismail,Jin Woo Cho,Se Jin Park,황윤정,Byoung Koun Min 대한화학회 2014 Bulletin of the Korean Chemical Society Vol.35 No.7
Cu2ZnSnSe4 (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at 400 °C involves the formation of secondary phases such as CuSe2 and Cu2SnSe3, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 cm2 with an open circuit voltage of 365 mV, a short current density of 20.6 mA/cm2, and a fill factor of 28.7%.
정성훈(Jung, Sung-Hun),안세진(Ahn, Se-Jin),윤재호(Yun, Jae-Ho),곽지혜(Gwak, Ji-Hye),조아라(Cho, A-Ra),윤경훈(Yoon, Kyung-Hoon),김동환(Kim, Dong-Hwan) 한국신재생에너지학회 2009 한국신재생에너지학회 학술대회논문집 Vol.2009 No.11
Despite the success of Cu(In,Ga)Se₂ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. One candidate to replace CIGS is Cu₂ZnSnSe₄ (CZTSe), fabricated by co-evaporation technique. Co-evaporation technique will be one of the best methods to control film composition. This type of absorber derives from the CuInSe² chalcopyrite structure by substituting half of the indium atoms with zinc and other half with tin. Energy bandgap of this material has been reported to range from 0.8eV for selenide to 1.5eV for the sulfide and large coefficient in the order of 10^{14}cm^{-1}, which means large possibility of commercial production of the most suitable absorber by using the CZTSe film. In this work, Effects of substrate temperature of Cu₂ZnSnSe₄ absorber layer on the performance of thin films solar cells were investigated. We reported on some of the absorber properties and device results.