http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Ziming Xie (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
SiC IGBT degradation mechanism investigation under HV‑H3TRB tests
Ziming Wu,Zongbei Dai,Jian Zhou,Huafeng Dong,Wencan Wang,Feiwan Xie,Haoran Wang,Jiahui Yan,Xiyu Chen,Shaohua Yang,Fugen Wu 전력전자학회 2024 JOURNAL OF POWER ELECTRONICS Vol.24 No.2
The high voltage-high humidity-high temperature reverse bias (HV-H3TRB) test was utilized to evaluate the reliability of silicon carbide insulated gate bipolar transistors (SiC IGBTs). Moisture invasion often induces termination/passivation and metal corrosion. Therefore, the HV-H3TRB test is generally used to assess termination / passivation robustness. However, under the HV-H3TRB test conditions, gate quality degradation may occur. In this study, the dominant degradation mechanism of SiC IGBTs was investigated. The changes of the most sensitive static characteristics (e.g., threshold voltage, breakdown voltage, and leakage current) were recorded. The threshold voltage decreased and leakage current increased substantially after > 1000 h of HV-H3TRB tests under 85 ℃/85% RH climate conditions. Capacitance-voltage (C-V) curve measurements indicated that the mobile ions at the SiC/SiO2 interface or in the gate oxide likely caused the threshold-voltage instability in the SiC IGBTs after the HV-H3TRB tests. This instability can be recovered by applying a negative gate bias. Subsequent failure analysis confirmed no corrosion of metals or termination/passivation in the device, which indicates the robustness of the passivation (consisting of phosphor-silicate glass and Si3N4). Therefore, the gate quality appears to be a significant reliability risk for SiC IGBTs under high humidity, high temperature, and high voltage conditions.
-
Weixiao Tuo,Xingfei Li,Yue Ji,Tengfei Wu,Ziming Xie 한국정밀공학회 2020 International Journal of Precision Engineering and Vol.21 No.5
In this paper, an analytical compliance model for right circle fl exure hinge (RCFH) is presented with the stress concentrationin consideration. The stress concentration caused by changes in RCFH’s cross-section usually happens at the weakestpoint. It has been shown to seriously aff ect RCFH’s compliance calculation. Based on the virtual work theory, superpositionrelationship of the deformation, as well as Castigliano’s second theorem, RCFH’s analytical compliance model consideringthe stress concentration eff ect is established. The model is calculated as a series of closed-form equations which are relatedwith geometric dimensions and employed material. Complicated defi nite integrals existing in these compliance equations areproved to be correctly calculated through comparisons with other literatures. Finally, in order to examine the validity of theestablished model, fi nite element analysis (FEA) is conducted. The relative errors between the theoretical values obtainedby the established model and FEA results are found within 20% for a wide range of geometric dimensions.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
