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Survey Analysis on Tourist Satisfaction in Jiuzhai Valley
Zhixue Liao,Maozhu Jin,Lu Huang 보안공학연구지원센터 2015 International Journal of Multimedia and Ubiquitous Vol.10 No.6
On the basis of empirical study on the characteristics of Jiuzhai Valley and tourist satisfaction, sample data which can reflect tourist satisfaction is obtained through questionnaires. With the help of SPSS 16.0, the data is processed and analyzed, and the result indicates that among all the factors that influent tourist satisfaction, satisfaction in varied dimensions differed greatly and each factor’s correspondent satisfaction in each dimension differed distinctively as well. Specifically, satisfaction of the scenic spot’s environment, infrastructure, management and service are higher than that of tourist scale, accommodation and catering. Correlation analysis and one-way ANOVA are adopted to analyze the aspects with low tourist satisfaction and put forward workable proposals.
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Query XML Streaming Data with List
He Zhixue,Liao Husheng 보안공학연구지원센터 2016 International Journal of Database Theory and Appli Vol.9 No.10
There has been a growing practical need for querying XML streaming data efficiently. Stream requires to be read sequentially and only once into memory, the query must be processed on the fly. QXSList technique is proposed for massive data processing, which takes the SAX events sequence as input, buffer the incoming elements for further processing, remove unnecessary elements from the buffer in time, and give the results on the fly. Data model and algorithm integrated framework are defined, the integrate methods of how to process predicate and wildcard are discussed respectively. Level value is used for determining the relationship of two elements and relational pointers are constructed for linking multi lists in this method. The experimental results show that our approach is effective and efficient on this problem, and outperforms the state-of-the-art algorithms and query engines especially for data size is very large. At the same time, memory usage is nearly constant.
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Xueqi Guo,Yuheng Zeng,Zhi Zhang,Yuqing Huang,Mingdun Liao,Qing Yang,Zhixue Wang,Minyong Du,Denggao Guan,Baojie Yan,Jichun Ye 한국물리학회 2019 Current Applied Physics Vol.19 No.7
The junction properties of tunnel silicon oxide (SiOx) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of ∼0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (Vbi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiOx, and 3) a sharp decrease to negative values, resulting from the charge tunneling through the SiOx layer. The C of depleting layer deviates from the normal linear curve in the 1/C2-V plot, which is caused by the diffusion of P dopants from the n-type poly-Si into the p-type c-Si wafer as confirmed by the electrochemical capacitance-voltage measurements. However, the 1/C2+γ-V plots with γ > 0 leads to linear curves with a proper γ and the Vbi can still be estimated. We find that the Vbi is the range of 0.75–0.85 V, increases with the increase of the doping ratio during the poly-Si fabrication process, and correlates with the passivation quality as measured by the reverse saturated current and implied open circuit voltage extracted from transient photoconductivity decay.
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