http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Juan Yao,Guotao Lin,Zhenxi Du,Jun Liang,Huan He,Xiaoming Shen,Yuechun Fu 대한금속·재료학회 2021 ELECTRONIC MATERIALS LETTERS Vol.17 No.4
ZnO nanowires (ZnO NWs) were synthesized by hydrothermal method on Si (100) substrates, in which an insulating MgOlayer deposited using sol–gel method was inserted between the seed layer and Si substrate. The eff ects of MgO layer on themicrostructure, luminescence and electrical properties of ZnO NWs as well as n-ZnO NWs/p-Si heterojunction LEDs wereinvestigated. With the insertion of MgO layer, well-aligned ZnO NWs with good crystalline quality are obtained, which canbe attributed to the smooth seed layer with homogeneous globular particles. The electroluminescence spectra of n-ZnO NWs/MgO/p-Si heterojunction LEDs exhibit a broad emission band from near ultraviolet to yellow-green region. n-ZnO NWs/MgO/p-Si heterojunction also shows an enhanced ultraviolet photoluminescence effi ciency, and its defect-related visibleemission is greatly suppressed compared with that of n-ZnO NWs/p-Si heterojunction. The current–voltage curves of bothheterojunction LEDs present a typical rectifying behavior, but the rectifi cation ratio increases almost 5 times by insertingMgO layer, which is ascribed to a reduction in the leakage current under reverse bias voltage.