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- 저자 : Zhenjun Yuan (검색결과 2 건)
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Numerical Investigation of the Turbulent Cavitating Flow over Submerged Bodies
Hong Feng,Gao Zhenjun,Liu Lili,Yuan Jianping 한국유체기계학회 2018 International journal of fluid machinery and syste Vol.11 No.1
A numerical method for the calculation of turbulent cavitating flow over submerged objects is proposed in present work. Cavitation is modeled via a single-fluid cavitation model which is derived based on a truncated form of the Rayleigh-Plesset equation and the mixture multiphase theory. The approach has been implemented by user-define function which is widely used in ANSYS FLUENT. Detailed results are presented for sheet cavitation over a submerged hemispherical object in a wide range of cavitation numbers and the cloud cavitation around a Clark-Y hydrofoil. In particular, for the hemispherical body, we compared the surface pressure distribution with experimental data which was available in literature. Later the cloud cavitation structure and its effect on the forces of the hydrofoil were studied. The comparisons between the simulating and experimental results show that present numerical approach has good capability to predict the surface pressure coefficient and the pulsation frequency at cavitation number σ=0.4, 0.55 and 0.65 of the hemispherical body under cavitation conditions. Meanwhile, for the hydrofoil, the proposed approach is sufficiently robust to predict the characteristics of the time-averaged lift and drag coefficients and the evolution of the cloud cavity with time.
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Wenhui Guo,Shuhu Guo,Xu Zhao,Zhenjun Yuan,Yu Zhao,Xin Chang,Hong Li,Xiong Zhao,Ye Wan,Dazhou Yan,Zhongyuan Ren,Xiaolei Fan,Xin Gao 한국공업화학회 2022 Journal of Industrial and Engineering Chemistry Vol.109 No.-
Ultra-high-purity (UHP) electronic-grade octamethylcyclotetrasiloxane (D4) is the key precursor of lowdielectricconstant (low-k) SiCOH films to manufacture integrated circuits (IC), meeting the stringentrequirements of the rapidly developing semiconductor industry. Commonly, metallic impurities in D4were removed by multiple unit operations of adsorption, filtration, and distillation, which could reducethe concentration of a single metallic impurity below 1 ppb. However, D4 with higher purity is requiredby semiconductor production due to an increase in transistor density. Herein, a novel method based onthe integrated simultaneous distillation–extraction (SDE) was developed for manufacturing UHPelectronic-grade D4. The lab and pilot scale experiments showed that the purity of water and D4 has apositive correlation. Based on the experimental data, a double-column process, consisting of azeotropic/extractive distillation column and precision distillation column with UNIQUAC method, was establishedto access the feasibility of scaling up the SDE process. According to the simulation results, D4with the purity > 99.999 wt.% and total metallic impurities (TMI) content below 1 ppb could be obtainedusing ultra-pure water.
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