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Epitaxial Growth of ZnO by Sol-Gel Method
Takashi Yasuda,Yasuhiro Obata,Mitsuru Sato,Yusaburo Segawa 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Epitaxial films of ZnO have been synthesized by the sol-gel method using ZnO buffer layers on sapphire (001) substrates. The buffer layers of 50-nm ZnO were epitaxially grown by metal organic chemical vapor deposition prior to the sol-gel process and significantly improved the crystallinity of the sol-gel ZnO. The six-fold symmetry observed in X-ray diffraction -scan spectra confirmed the epitaxial nature of the sol-gel ZnO films. Excitonic recombinations were dominant in the photoluminescence, while defect-related emissions around 3.31 to 3.32 eV, which are commonly observed in polycrystalline sol-gel films, were not observed in the sol-gel ZnO with ZnO buffer layers.