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RISS 인기검색어
- 검색키워드
- 저자 : Yu. V. Shevtsov (검색결과 2 건)
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( A. S. Berdinsky ),( Yu. V. Shevtsov ),( Hui Gon Chun ),( Yong Zoo Yoo ),( D. Fink ),( B. M. Ayupov ) 한국센서학회 2004 센서학회지 Vol.13 No.5
N/A We report on the technology of formation of sandwich structures based on fullerite films and on experimental results in research of optical and conductivity properties of these sandwich samples. Single crystals of sapphire (100) or silicon were used as substrates. The sandwich specimens were based on the structure M/C_(60)/M (M=Cr, Pd, Ag, Al, Cu). The thickness of the fullerite films was about 0.2~1.0 μm. The area of the C50 film under the top contact was about I cm². The specimens have been investigated by infrared spectroscopy, spectra-photometry. ellipsometry and X-ray diffraction analysis. Measurements of the current/voltage characteristics and research on the temperature dependence of conductivity were performed as well. It was shown that metals such as Cr, Pd. Ag. Al, and Cu penetrate easily into the fullerite films. It appears that these specimens have a large conductivity. For silver/C_(60) and other sandwich structures the conductivities show a semiconductor-like behaviour.
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Gas-Phase Technology and Microstructure of Fullerite Films
A.S. Berdinsky,Hui-Gon Chun,Jing-Hyuk Lee,Yong-Hwa Song,Yu. V. Shevtsov 한국표면공학회 2004 한국표면공학회지 Vol.37 No.2
The technology of C?? fullerite films preparation by means of gas-phase deposition and structure of fullerite films are described. A three-channel flow plant was used to obtain fullerite films. The films were deposited in the flow of inert gas under reduced pressure onto a cooled silicon or sapphire substrate placed inside the reaction chamber of the plant. The plant allows one to obtain the films of pure fullerenes and to synthesise the films from fullerene compounds and doped fullerenes. The structure of two types of films were investigated by FE-SEM and SEM techniques: pure fullerite films onto silicon and sapphire substrates as well as compound films were studied by FE-SEM technique. All samples have shown columnar structure with high level of porosity. The synthesis of films composed of fullerene and its compounds for use in electronics is demonstrated to be promising. For example, experiments confirm the possibility to use fullerite films in sensor electronics to produce humidity and thermal sensors. It is also possible to use the sensitivity of these films to isotropic pressure. The experiments with C??-Cu-J films have shown quite strong dependence of their resistance on pressure of different sort of medium-gas that could be used in gas-sensitive sensors. The structure and preparation technology of resistive sensor based on fullerite films are described.
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