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Investigation of Noise Characteristics of pn Diodes by Using a Device Simulator
HyunchulNah,Young-JunePark,HongShickMin,ChanhoLee,HyungsoonShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6
The noise characteristics of pn diodes obtained using a partial dierential equation (PDE) based device simulator with the transfer impedance method and the diffusion and the generationrecombination processes as the fundamental noise sources are investigated. From this approach, the noise behaviors over the entire operating region from the reverse to the very high forward bias regions for both long- and short-base diodes are obtained, and the results demonstrate good agreement with the previously reported data, except for the high forward bias region. A noise equivalent circuit model is introduced to explain the noise behaviors for that region and is proven to be useful for long-base diodes.
Analytical Model for and Scale-Down E ect of a Floating Body Voltage in SOI MOSFETs
Jeong-HyongYi,Young-JunePark,HongShickMin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
Models for charge sharing and the body current of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs are proposed in order to extract the oating body voltage of devices under various operating conditions and for various device structure parameters. Also, an SOI simulator, incorporating the proposed models, is developed to predict the scaling properties of the oating body voltage, especially in the low voltage region.