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Investigations of δ -Doped In0.52Al0.48As/InxGa1-xAs/InP HEMTs with Different Channel Structures
Ching-Sung Lee,Hsin-Hung Chen,Jun-Chin Huang,Wei-Chou Hsu,Yeong-Jia Chen 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.6
The device characteristics of -doped In0.52Al0.48As/InGaAs/InP high-electron-mobility transistors (HEMTs) with different channel designs, grown by using the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique, have been studied. The InxGa1.xAs channel structures include a step-graded channel (SGC) with x = 0.56/0.53/0.5, a lattice-matched channel (LMC) with x = 0.53, and an inverse linearly-graded channel (ILGC) with x = 0.5 ! 0.56. Improvements in the device’s threshold, extrinsic conductance, saturation current density, gate-voltage swing (GVS), output conductance, voltage gain, and high-frequency and high-temperature performances have been comprehensively investigated and compared with respect to the specific channel design.
Ching-Sung Lee,Dong-Hai Huang,Jun-Chin Huang,Ke-Hua Su,Wei-Chou Hsu,Yeong-Jia Chen 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.4
A -doped In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high electron mobility transistor (MHEMT) using a Ni/Au-gate electrode has been successfully fabricated and demonstrated. Compared to conventional Au-gate devices with identical structures, the proposed device improves the kink-effect-related output conductance, the gate-voltage swing, the current drive capability, the breakdown characteristics, and the device power performance. Experimentally, a high extrinsic transconductance of 309 mS/mm, a high drain-source saturation current density of 573 mA/mm, an improved gate-voltage swing of 1.05 V with a corresponding saturation current density of 314 mA/mm, a high saturated output power of 11.3 dBm, and a high power gain of 23.8 dB with a power-added efficiency of 39.2 % are obtained for a 0.65 × 200 μm2 gate at 300 K. In addition, the measured fT and fmax are 49.1 and 61.7 GHz, respectively.
An Improved Symmetrically-Graded Doped-Channel Heterostructure Field-Effect Transistor
Ke-Hua Su,Wei-Chou Hsu,Chang-Luen Wu,Ching-Sung Lee,Po-Jung Hu,Yeong-Jia Chen,Yu-Shyan Lin 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.6
A new heterostructure field-effect transistor with an InGaAs symmetrically-graded doped-channel (SGDC) structure has been successfully investigated. The channel design demonstrated a reduced Coulomb scattering phenomenon by confining the conduction electrons away from the channel/spacer interface. Consequently, a higher current density, a higher breakdown voltage, a wider gate-voltage swing, a higher transconductance, a higher threshold voltage, and improved microwave and power characteristics were achieved by using the SGDC structure, as compared to those of conventional doped-channel devices. Besides, the AlGaAs/GaAs superlattice buffer structure was used to improve the high-temperature threshold-voltage characteristics.